PNP PIN bipolar phototransistors for high-speed applications built in a 180nm CMOS process

Kostov, Plamen; Gaberl, W.; Hofbauer, Michael; Zimmermann, Horst

doi:10.1016/j.sse.2012.04.011

Cited by 12 publications

(9 citation statements)

References 22 publications

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“…The measured photoresponsivity decreases with increasing optical power. This phenomenon is typically observed in phototransistors due to high light power affecting the gate and/or base potential 11 12 . We found that the decrease of ON with increasing P IN can be fitted by a power law of the form: ON ∝ P IN β with β values between −0.7 – −0.9 ( Fig.…”

Section: Resultsmentioning

confidence: 99%

“…Using a phototransistor (PT) that is a photodetector with internal gain may help mitigate these issues. In fact, several attempts have been made in the design and fabrication of phototransistors with different device configurations including MOSFETs 6 7 , JFETs 8 9 , and BJTs 10 11 12 . A photoMOSFET in a standard MOS configuration that eliminates metal wires connecting photodiodes and their proximal MOSFETs in receiver circuits is the most promising solution to simultaneously realize photodetection and electrical amplification within a single device.…”

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confidence: 99%

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High Photoresponsivity Ge-dot PhotoMOSFETs for Low-power Monolithically-Integrated Si Optical Interconnects

Kuo

Lee

Lin

et al. 2017

Sci Rep

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We report the demonstration of high-photoresponsivity Ge-dot photoMOSFETs in a standard MOS configuration for the detection of 850–1550 nm illumination. Each device has a self-organized, gate-stacking heterostructure of SiO2/Ge-dot/SiO2/SiGe-channel which is simultaneously fabricated in a single oxidation step. Superior control of the geometrical size and chemical composition for our Ge nanodots/SiO2/Si1-xGex-shell MOS structure enables the practically-achievable, gate-stacking design for our Ge-dot photoMOSFETs. Both the gate oxide thickness and the diameter of the Ge dots are controllable. Large photocurrent enhancement was achieved for our Ge-dot photoMOSFETs when electrically-biased at ON- and OFF-states based on the Ge dot mediating photovoltaic and photoconductive effects, respectively. Both photoelectric conversion efficiency and response speed are significantly improved by reducing the gate-oxide thickness from 38.5 nm to 3.5 nm, and by decreasing Ge-dot size from 90 nm to 50 nm for a given areal density of Ge dots. Photoresponsivity () values as high as 1.2 × 104 A/W and 300 A/W are measured for 10 nW illumination at 850 nm and 1550 nm, respectively. A response time of 0.48 ns and a 3 dB-frequency of 2 GHz were achieved for 50 nm-Ge-dot photoMOSFETs with channel lengths of 3 μm under pulsed 850 nm illumination.

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Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

High Photoresponsivity Ge-dot PhotoMOSFETs for Low-power Monolithically-Integrated Si Optical Interconnects

Kuo

Lee

Lin

et al. 2017

Sci Rep

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“…Theoretically, even when the base of the NPN phototransistor is not connected and wired, the light sensitivity of a phototransistor still outperform a photodiode by providing an additional gain in the case of low light detection [21]. Therefore, using phototransistor as primary device becomes the preferred choice for low intensity light detection in low turbidity situations.…”

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confidence: 99%

Low-Cost Turbidity Sensor for Low-Power Wireless Monitoring of Fresh-Water Courses

et al. 2018

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This paper reports on a low-cost turbidity sensor design for continuous on-line water quality monitoring applications. The measurement of turbidity by agricultural and environmental scientists is restricted by the current cost and functionality of available commercial instruments. Although there are a number of low-cost turbidity sensors exploited within domestic 'white-goods', such as dishwashers, the lack of sensitivity and power-usage of these devices make them unsuitable for freshwater quality monitoring purposes. The recent introduction of wireless protocols and hardware, associated with the 'Internet-of-Things' concept for machine-tomachine autonomous sensing and control, has enabled the largescale networked intelligent water turbidity monitoring system that implements relatively low-cost sensors to be developed. The proposed sensor uses both transmitted light and orthogonal (90 degrees) scattered light detection principles, and is 2-3 orders of magnitude lower in cost as compared to the existing commercial turbidity sensors. With an 850nm infrared LED, and dual orthogonal photodetectors, the proposed design is capable of measuring turbidity within the range of 0-1000 Nephelometric Turbidity Unit (NTU) with improved accuracy and robustness as compared to the existing low cost turbidity sensors. The combination of orthogonal and transmitted light detection unit provide both 0-200 NTU high resolution and accuracy sensing and 0-1000 NTU lower resolution and accuracy sensing capability. Results from calibration experiment are presented, which proved that the proposed sensor design produced a comparable turbidity reading as a commercial turbidity sensor.

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“…The used PTs (50 B Center E , 100 B Edge E and 100 B Quad E ) are presented in [5]. The cross section of one PT (50 B Center E ) is depicted in Fig.…”

Section: A Phototransistorsmentioning

confidence: 99%

Phototransistor based Time-of-Flight range finding sensor in an 180 nm CMOS process

Kostov

Davidović

Hofbauer

et al. 2012

IEEE Photonics Conference 2012

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PNP PIN bipolar phototransistors for high-speed applications built in a 180nm CMOS process

Cited by 12 publications

References 22 publications

High Photoresponsivity Ge-dot PhotoMOSFETs for Low-power Monolithically-Integrated Si Optical Interconnects

High Photoresponsivity Ge-dot PhotoMOSFETs for Low-power Monolithically-Integrated Si Optical Interconnects

Low-Cost Turbidity Sensor for Low-Power Wireless Monitoring of Fresh-Water Courses

Phototransistor based Time-of-Flight range finding sensor in an 180 nm CMOS process

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