2015
DOI: 10.1007/s10854-015-3025-0
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PLZT film capacitors for power electronics and energy storage applications

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Cited by 69 publications
(46 citation statements)
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“…The highest energy W re of 6.4 J/cm 3 to date has been demonstrated on PLZST‐based AFE ceramics at a high field of 400 kV/cm and with an efficiency of 67% . Higher values have been achieved in thin film forms, but the thickness limitation has not always met the practical requirements …”
Section: Resultsmentioning
confidence: 99%
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“…The highest energy W re of 6.4 J/cm 3 to date has been demonstrated on PLZST‐based AFE ceramics at a high field of 400 kV/cm and with an efficiency of 67% . Higher values have been achieved in thin film forms, but the thickness limitation has not always met the practical requirements …”
Section: Resultsmentioning
confidence: 99%
“…In recent years, the demand for AFE materials with the electric field‐induced AFE‐to‐FE phase switching has been on the rise. These materials became very promising to realize electronic materials like highly efficient energy storage materials, pulsed power circuits and generators, displacement transducers, microactuators, pyroelectric security sensors, cooling devices, etc . Since the high recoverable energy density of AFE materials is due to the reversible electric field‐induced AFE‐to‐FE phase main characteristic, it is necessary to produce materials with the AFE/FE phase boundary at room temperature.…”
Section: Introductionmentioning
confidence: 99%
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“…(Balu) Balachandran et al at Argonne National Laboratory have produced dense ceramic films of lanthanum-doped lead zirconate titanate (PLZT) on various substrates by room temperature AD. 84) AD-PLZT film capacitors exhibit excellent volume and specific gravity capacities when compared to currently used polymer film capacitors. The measured properties indicated that PLZT-based ceramic film capacitors meet the requirements of modern high temperature capacitors.…”
Section: Application To Energy and Environment Related Devicesmentioning
confidence: 99%
“…7,[10][11][12] Among them, the PbZrO 3 -based ferroelectric films, such as (Pb, La)(Zr, Ti)O 3 , (Pb, La)(Zr, Sn, Ti)O 3 , and (Pb, Nb)(Zr, Sn, Ti)O 3 , exhibit high energy density (10-85 J/cm 3 ) at room temperature, and have been considered the most promising candidates for applications in high-power energy storage. [13][14][15][16][17][18][19][20][21][22] However, the high energy density ($85 J/cm 3 ) only can be achieved at room temperature due to lower breakdown voltage at higher temperature, 22 and by far, the vast majority of investigations on PbZrO 3 -based ferroelectric thin films are focused on the energy storage properties at room temperature. In practical applications, the device operation temperature may fluctuate within a certain range.…”
mentioning
confidence: 99%