“…7,[10][11][12] Among them, the PbZrO 3 -based ferroelectric films, such as (Pb, La)(Zr, Ti)O 3 , (Pb, La)(Zr, Sn, Ti)O 3 , and (Pb, Nb)(Zr, Sn, Ti)O 3 , exhibit high energy density (10-85 J/cm 3 ) at room temperature, and have been considered the most promising candidates for applications in high-power energy storage. [13][14][15][16][17][18][19][20][21][22] However, the high energy density ($85 J/cm 3 ) only can be achieved at room temperature due to lower breakdown voltage at higher temperature, 22 and by far, the vast majority of investigations on PbZrO 3 -based ferroelectric thin films are focused on the energy storage properties at room temperature. In practical applications, the device operation temperature may fluctuate within a certain range.…”