PLD-prepared cadmium sensors based on chalcogenide glasses—ISFET, LAPS and μISE semiconductor structures

Kloock, Joachim P.; Moreno, L.; Bratov, Andrey; Huachupoma, S.; Xu, Jianjun; Wagner, Torsten; Yoshinobu, Tatsuo; Ermolenko, Yu. Е.; Vlasov, Yu. G.; Schöning, Michael J.

doi:10.1016/j.snb.2006.04.018

Cited by 66 publications

(45 citation statements)

References 15 publications

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“…10 and 12) show significant contributions from GaTe 4 and GeTe 4 units, and the associated Raman-active breathing modes of Ga-Te and GeTe bonds are between 117 and 130 cm −1 for the tetrahedral local environment of Ga and Ge. The minimum of the measured depolarization ratio ρ at ∼122 cm −1 indicates that this is the most polarized frequency.…”

Section: Discussionmentioning

confidence: 98%

“…In addition to infrared optical elements, 1 electrolytes for solid-state batteries, 2 and sensors for liquid 3 and gas analysis, 4 Te-based alloys are the basis of many phase-change materials that are used widely in optical storage devices. Nanosized bits in thin films of these materials show remarkably rapid and reversible transitions between the amorphous (a) and crystalline (c) states, whose different conductivities and optical properties allow the state to be identified.…”

Section: Introductionmentioning

confidence: 99%

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Structure, electronic, and vibrational properties of glassy Ga11Ge11Te78: Experimentally constrained densi

et al. 2012

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The atomic structure and electronic and vibrational properties of glassy Ga 11 Ge 11 Te 78 have been studied by combining density functional (DF) simulations with x-ray (XRD) and neutron diffraction (ND), extended x-ray absorption fine structure (EXAFS), and Raman spectroscopies. The final DF structure (540 atoms) was refined using reverse Monte Carlo methods to reproduce the XRD and ND data as well as Ge and Ga K-edge EXAFS spectra, while maintaining a semiconducting band gap and a total energy close to the DF minimum. The local coordination of Ga is tetrahedral, while Ge has twice as many tetrahedral as defective octahedral configurations. The average coordination numbers are Ga, 4.1, Ge, 3.8, and Te, 2.6. The chemical bonding around Ga involves Ga 4s, Ga 4p, Te 5s, and Te 5p orbitals, and the bond strengths show bonding close to covalent, as in Ge. There are fewer Te chains and cavities than in amorphous Te, and a prepeak in the structure factor at 1.0Å −1 indicates medium-range order of the Ga/Ge network. Density functional calculations show that contributions of Te-Te, Ga-Te, and Ge-Te bonds dominate the experimental Raman spectra in the 110-150 cm −1 range.

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Section: Discussionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Structure, electronic, and vibrational properties of glassy Ga11Ge11Te78: Experimentally constrained densi

et al. 2012

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“…The single mISEs have been characterized in terms of their analytical performance. To exem- A first step towards a fully integrated chalcogenide glassbased thin-film sensor array has been reported in [53,56]. Here, three chalcogenide glass mixtures of Pb-Ag-As-I-S, Cd-Ag-As-I-S and Cu-Ag-As-Se have been deposited and patterned onto the same silicon chip as mISE array utilizing silicon planar technology in combination with the PLD process.…”

mentioning

confidence: 99%

About 20 Years of Silicon‐Based Thin‐Film Sensors with Chalcogenide Glass Materials for Heavy Metal Analysis: Technological Aspects of Fabrication and Miniaturization

Schöning

Kloock

2007

Electroanalysis

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Chalcogenide glass materials as membranes for potentiometric sensors for chemical analysis in solutions, e.g., ionselective electrodes, have been studied for more than three decades. Already in the 1970s, first papers dealt with the ion-sensing properties of chalcogenide glasses, followed by systematic investigations of their solid-state chemistry, the sensing mechanism and their analytical characteristics. Combining the analytical performance of chalcogenide glass membranes with techniques originally invented for semiconductor processing, a new generation of silicon-based thinfilm sensors with chalcogenide glass materials for heavy metal detection has been created. In the beginning, co-sputtering of Cu and As 2 Se 3 resulted in a Cu 2þ -selective field-effect sensor, while in recent years, a variety of chalcogenide glass materials have been stoichiometrically deposited onto ISFETs (ion-sensitive field-effect transistor), EIS (electrolyte-insulator-semiconductor), LAPS (light-addressable potentiometric sensor) and mISE structures, respectively, serving as miniaturized chemical sensors. The present review paper is devoted to research and development in the field of silicon-based thin-film sensors with chalcogenide glass materials and emphasizes technological aspects of fabrication and miniaturization within the last 20 years.

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“…Such FET devices are reviewed in greater detail in Section 2.1.4. A further example and novel optical/electrochemical hybrid technique is known as a Light Addressable Potentiometric Sensor (LAPS) [32,33,34,35,36]. LAPS is a silicon-based detector that takes advantage of the photovoltaic effect to selectively determine the point of measurement.…”

Section: −11mentioning

confidence: 99%

Electrochemical Biosensors - Sensor Principles and Architectures

Grieshaber

MacKenzie

Vörös

et al. 2008

Sensors

838

636

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Quantification of biological or biochemical processes are of utmost importance for medical, biological and biotechnological applications. However, converting the biological information to an easily processed electronic signal is challenging due to the complexity of connecting an electronic device directly to a biological environment. Electrochemical biosensors provide an attractive means to analyze the content of a biological sample due to the direct conversion of a biological event to an electronic signal. Over the past decades several sensing concepts and related devices have been developed. In this review, the most common traditional techniques, such as cyclic voltammetry, chronoamperometry, chronopotentiometry, impedance spectroscopy, and various field-effect transistor based methods are presented along with selected promising novel approaches, such as nanowire or magnetic nanoparticle-based biosensing. Additional measurement techniques, which have been shown useful in combination with electrochemical detection, are also summarized, such as the electrochemical versions of surface plasmon resonance, optical waveguide lightmode spectroscopy, ellipsometry, quartz crystal microbalance, and scanning probe microscopy. The signal transduction and the general performance of electrochemical sensors are often determined by the surface architectures that connect the sensing element to the biological sample at the nanometer scale. The most common surface modification techniques, the various electrochemical transduction mechanisms, and the choice of the recognition receptor molecules all influence the ultimate sensitivity of the sensor. New nanotechnology-based approaches, such as the use of engineered ion-channels in lipid bilayers, the encapsulation of enzymes into vesicles, polymersomes, or polyelectrolyte capsules provide additional possibilities for signal amplification. In particular, this review highlights the importance of the precise control over the delicate interplay between surface nano-architectures, surface functionalization and the chosen sensor transducer principle, as well as the usefulness of complementary characterization tools to interpret and to optimize the sensor response.

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PLD-prepared cadmium sensors based on chalcogenide glasses—ISFET, LAPS and μISE semiconductor structures

Cited by 66 publications

References 15 publications

Structure, electronic, and vibrational properties of glassy Ga11Ge11Te78: Experimentally constrained densi

Structure, electronic, and vibrational properties of glassy Ga11Ge11Te78: Experimentally constrained densi

About 20 Years of Silicon‐Based Thin‐Film Sensors with Chalcogenide Glass Materials for Heavy Metal Analysis: Technological Aspects of Fabrication and Miniaturization

Electrochemical Biosensors - Sensor Principles and Architectures

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