Platelet growth of mercuric iodide

McGregor, Douglas S.; Ariesanti, E.

doi:10.1016/j.jcrysgro.2013.03.001

Cited by 5 publications

(1 citation statement)

References 19 publications

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“…Therefore, we employed vapor transport to grow single crystals, as this method is also performs self-purification during transport . It has been employed in growing compounds with high melting points, semiconductors that are inclined to dissociate at their melting temperatures, and those suffering from phase-transitions during cooling, such as ZnSe, ZnS, and α-HgI 2 , III nitrides (GaN), oxides (ZnO), and so forth. ,− In general, the temperature for vapor transport takes place at lower temperature than the melting point, thus reducing possible contamination from the crucible. The solid–vapor interfaces exhibit higher interfacial morphological stability during growth than do solid–liquid interfaces, which suppresses the formation of secondary phases during growth and leads to better quality of the crystals.…”

Section: Resultsmentioning

confidence: 99%

Defect Antiperovskite Compounds Hg₃Q₂I₂ (Q = S, Se, and Te) for Room-Temperature Hard Radiation Detection

Kontsevoi

Stoumpos

et al. 2017

J. Am. Chem. Soc.

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The high Z chalcohalides HgQI (Q = S, Se, and Te) can be regarded as of antiperovskite structure with ordered vacancies and are demonstrated to be very promising candidates for X- and γ-ray semiconductor detectors. Depending on Q, the ordering of the Hg vacancies in these defect antiperovskites varies and yields a rich family of distinct crystal structures ranging from zero-dimensional to three-dimensional, with a dramatic effect on the properties of each compound. All three HgQI compounds show very suitable optical, electrical, and good mechanical properties required for radiation detection at room temperature. These compounds possess a high density (>7 g/cm) and wide bandgaps (>1.9 eV), showing great stopping power for hard radiation and high intrinsic electrical resistivity, over 10 Ω cm. Large single crystals are grown using the vapor transport method, and each material shows excellent photo sensitivity under energetic photons. Detectors made from thin HgQI crystals show reasonable response under a series of radiation sources, including Am andCo radiation. The dimensionality of Hg-Q motifs (in terms of ordering patterns of Hg vacancies) has a strong influence on the conduction band structure, which gives the quasi one-dimensional HgSeI a more prominently dispersive conduction band structure and leads to a low electron effective mass (0.20 m). For HgSeI detectors, spectroscopic resolution is achieved for both Am α particles (5.49 MeV) andAm γ-rays (59.5 keV), with full widths at half-maximum (FWHM, in percentage) of 19% and 50%, respectively. The carrier mobility-lifetime μτ product for HgQI detectors is achieved as 10-10 cm/V. The electron mobility for HgSeI is estimated as 104 ± 12 cm/(V·s). On the basis of these results, HgSeI is the most promising for room-temperature radiation detection.

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Section: Resultsmentioning

confidence: 99%

Defect Antiperovskite Compounds Hg₃Q₂I₂ (Q = S, Se, and Te) for Room-Temperature Hard Radiation Detection

Kontsevoi

Stoumpos

et al. 2017

J. Am. Chem. Soc.

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Sensitive and Fast Direct Conversion X‐Ray Detectors Based on Single‐Crystalline HgI₂ Photoconductor and ZnO Nanowire Vacuum Diode

Zhang

Zheng

et al. 2020

Adv Materials Technologies

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Photoconductive cold cathode X‐ray detectors are highly promising for use in medical diagnosis, industrial inspection, and scientific research applications. However, development of highly sensitive, fast, and stable direct conversion X‐ray detectors remains very challenging because of structural and material limitations. This article presents a direct conversion X‐ray detector based on a HgI2 crystal and a ZnO nanowire vacuum diode with sensitivity of 6.8 × 103 µCGyair−1 cm−2, which is nearly two orders of magnitude higher than that of a commercial a‐Se X‐ray detector. The X‐ray detector, which uses a high‐crystallization HgI2 photoconductor, shows a response time of 0.24 ms, thus significantly outperforming the polycrystalline HgI2 X‐ray detector. In addition, the current limitation between the HgI2 photoconductor and the ZnO nanowire cold cathodes guaranteed device reliability under high applied electric fields for practical applications. The findings presented in this work demonstrate that the proposed X‐ray detector based on the HgI2 photoconductor and the ZnO nanowire vacuum diode is highly efficient and stable.

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Microstructural Studies and Elemental Imaging of Renal Stones by Scanning Electron Microscopy–Energy-Dispersive X-ray Spectroscopy

Bali,

Khajuria,

Rai

et al. 2023

Braz J Phys

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Platelet growth of mercuric iodide

Cited by 5 publications

References 19 publications

Defect Antiperovskite Compounds Hg₃Q₂I₂ (Q = S, Se, and Te) for Room-Temperature Hard Radiation Detection

Defect Antiperovskite Compounds Hg₃Q₂I₂ (Q = S, Se, and Te) for Room-Temperature Hard Radiation Detection

Sensitive and Fast Direct Conversion X‐Ray Detectors Based on Single‐Crystalline HgI₂ Photoconductor and ZnO Nanowire Vacuum Diode

Microstructural Studies and Elemental Imaging of Renal Stones by Scanning Electron Microscopy–Energy-Dispersive X-ray Spectroscopy

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Platelet growth of mercuric iodide

Cited by 5 publications

References 19 publications

Defect Antiperovskite Compounds Hg3Q2I2 (Q = S, Se, and Te) for Room-Temperature Hard Radiation Detection

Defect Antiperovskite Compounds Hg3Q2I2 (Q = S, Se, and Te) for Room-Temperature Hard Radiation Detection

Sensitive and Fast Direct Conversion X‐Ray Detectors Based on Single‐Crystalline HgI2 Photoconductor and ZnO Nanowire Vacuum Diode

Microstructural Studies and Elemental Imaging of Renal Stones by Scanning Electron Microscopy–Energy-Dispersive X-ray Spectroscopy

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Product

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Defect Antiperovskite Compounds Hg₃Q₂I₂ (Q = S, Se, and Te) for Room-Temperature Hard Radiation Detection

Defect Antiperovskite Compounds Hg₃Q₂I₂ (Q = S, Se, and Te) for Room-Temperature Hard Radiation Detection

Sensitive and Fast Direct Conversion X‐Ray Detectors Based on Single‐Crystalline HgI₂ Photoconductor and ZnO Nanowire Vacuum Diode