Plastic properties of thin films on substrates as measured by submicron indentation hardness and substrate curvature techniques

Doerner, M.; Gardner, Donald S.; Nix, William D.

doi:10.1557/jmr.1986.0845

Cited by 323 publications

(97 citation statements)

References 14 publications

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“…Large stresses [21] build up in the film due to the large difference in thermal expansion coefficients between Al (24x10-6/°C) and the substrate Si (2.3x10-6/*C). Time dependent stress relaxation during these anneals would be more extensive during the slower FA cycle, and would lead to generally lower stresses at equivalent temperatures as compared to the RTA cycles.…”

Section: Discussionmentioning

confidence: 99%

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Grain Growth in Al-2% Cu Thin Films

Sanchez¹,

Frear²,

Morris

1992

MSF

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DISCLAIMERThis document was prepared as an account of work sponsored by the United States Government. Neither the United States Government nor any agency thereof, nor The Regents of the University of California, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any ir_ormation, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by its trade name, _ademark, manufacturer, or otherwise, does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States Government or any agency thereof, or The Regents of the University of California. The views and opi_ons of authors expressed herein do not necessarily state or reflect those of the United States Government or any agency thereof or The Regents of the University of California and shall not be used for advertising or produc: endorsement purposes. J 'Lawrence Berkeley Laboratory is an equal opportunity employer. LBL--31203 DE92 002263Grain Growth in AI-2% Cu Thin Films ABSTRACTThe grain size and grain growth kinetics in sputter deposited AI-2% Cu films on silicon substrates were determined by TEM for various film thicknesses and anneal times, temperatures and methods. Grain sizes were found to be typically lognomaally distributed. The as-deposited grain size (do) dependence on film thickness (TIl) was found to be do = C TH1/2, due to competitive grain growth during film formation. Annealed grain size (d) after Rapid Thermal Annealing (RTA) for time (t) at temperature (T) is described by the general equation d -do = C TH 0.7 {t exp (-AEa/kT) }1/8,where ZkEa= 0.85 ev for 0.4 I.tm films and AEa = 1.1 ev for 0.8 I.tm films. Grain growth is largely saturated for these anneals. Grain growth is shown to be more extensive during RTA anneals than furnace annealing and more extensive in 0.4 l.tm films than 0.8 I.tm films for equivalent RTA cycles. The results are discussed in terms of models, simulations and previous results of grain growth in thin metal films.

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Section: Discussionmentioning

confidence: 99%

“…However, no work has been reported which shows the effect of stress on boundary mobility or grain growth in thin films. Note that during typical anneals thinner AI films may sustain larger stresses than thicker films [21]. Thus a stress effect on (increasing) grain growth would be greater for thinner films.…”

Section: Discussionmentioning

confidence: 99%

Grain Growth in Al-2% Cu Thin Films

Sanchez¹,

Frear²,

Morris

1992

MSF

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“…To evaluate nanometer-scale deformation properties, the nanohardness and elastic modulus of all films were measured using a Hysitron Triboscope  nanomechanical testing system (Doerner et al, 1986;Farhat et al, 1997;Miyake, 2003). A total of ten indentations were performed for each sample and the mean values and standard deviation of the hardness and elastic modulus were computed; the results are provided later in the chapter.…”

Section: Evaluation Of Nanoindentation Hardnessmentioning

confidence: 99%

Nanomechanical Evaluation of Ultrathin Lubricant Films on Magnetic Disks by Atomic Force Microscopy

Miyake¹,

Wang²

2012

Scanning Probe Microscopy-Physical Property Characterization at Nanoscale

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“…Another technique which has been used for measuring the mechanical properties of materials used in MEMS involves using thermal expansion and substrate curvature methods for certain film-substrate combinations 55,56 . When the temperature of the bilayer beam is changed, the difference in thermal expansion between the film and the substrate sets up internal biaxial stresses in the composite which vary with the temperature such that 55 :…”

Section: Film-substrate Combinations Subjected To Thermal Stressmentioning

confidence: 99%

Experimental Techniques for the Measurement of Mechanical Properties of Materials Used in Microelectromechanical Systems

Kamat¹

2009

DSJ

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The knowledge of mechanical properties of materials used in microelectromechanical systems (MEMS) devices is critical not only in designing structures such as cantilevers and beams but also for ensuring their reliability during operation of these devices. It has been established that the mechanical properties are scaleand-process-dependent, and hence it is essential to measure the mechanical properties of these materials at the same length scale and using the same process as that used in their usage in MEMS devices. The various experimental techniques in vogue to measure the mechanical properties of these materials are briefly reviewed. The facilities established at the Defence Metallurgical Research Laboratory, Hyderabad, and their capabilities are also highlighted.

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Plastic properties of thin films on substrates as measured by submicron indentation hardness and substrate curvature techniques

Cited by 323 publications

References 14 publications

Grain Growth in Al-2% Cu Thin Films

Grain Growth in Al-2% Cu Thin Films

Nanomechanical Evaluation of Ultrathin Lubricant Films on Magnetic Disks by Atomic Force Microscopy

Experimental Techniques for the Measurement of Mechanical Properties of Materials Used in Microelectromechanical Systems

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