Plastic Flow and Dislocation Compensation in ZnS y Se1−y /GaAs (001) Heterostructures

Kujofsa, Tedi; Yu, Wenbin; Cheruku, S.; Outlaw, B.; Xhurxhi, S.; Obst, F.; Sidoti, David; Bertoli, B.; Rago, P. B.; Suarez, Ernesto; Jain, F.; Ayers, J. E.

doi:10.1007/s11664-012-2195-2

Cited by 28 publications

(24 citation statements)

References 27 publications

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“…Thus, the strained layer relaxes and adopts an in-plane lattice constant closer to its inherent value. Although the exact mechanisms responsible for the formation of these segments are only partly understood, this process is clearly driven by strain energy [17], [18]. Therefore, a large lattice mismatch with the substrate is desirable for the growth of a thin MMB.…”

Section: Relaxation-optimized Buffer Designmentioning

confidence: 99%

Thin-Film InGaAs Metamorphic Buffer for telecom C-band InAs Quantum Dots and Optical Resonators on GaAs Platform

Sittig¹,

Nawrath²,

Kolatschek³

et al. 2021

Preprint

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The GaAs-based material system is well-known for the implementation of InAs quantum dots (QDs) with outstanding optical properties [1]. However, these dots typically emit at a wavelength of around 900 nm. The insertion of a metamorphic buffer (MMB) can shift the emission to the technologically attractive telecom C-band range centered at 1550 nm. However, the thickness of common MMB designs limits their compatibility with most photonic resonator types [2]. Here we report on the MOVPE growth of a novel InGaAs MMB with a non-linear indium content grading profile designed to maximize plastic relaxation within minimal layer thickness. Single-photon emission at 1550 nm from InAs QDs deposited on top of this thin-film MMB is demonstrated. The strength of the new design is proven by integrating it into a bullseye cavity via nano-structuring techniques. The presented advances in the epitaxial growth of QD/MMB structures form the basis for the fabrication of highquality telecom non-classical light sources as a key component of photonic quantum technologies.

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Section: Relaxation-optimized Buffer Designmentioning

confidence: 99%

Thin-Film InGaAs Metamorphic Buffer for telecom C-band InAs Quantum Dots and Optical Resonators on GaAs Platform

Sittig¹,

Nawrath²,

Kolatschek³

et al. 2021

Preprint

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“…where t 0 represents the time of the onset of lattice relaxation, corresponding to the critical layer thickness, and s is a variable of integration representing time. The threading dislocation density may be found as a function of distance from the interface by 13,16,17…”

Section: Plastic Flow Model Including Pinningmentioning

confidence: 99%

Dislocation Sidewall Gettering in II-VI Semiconductors and the Effect of Dislocation Pinning Interactions

Kujofsa

Ayers

2020

Journal of Elec Materi

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It has been shown that threading dislocations may be removed from patterned mismatched heteroepitaxial layers through a process of dislocation sidewall gettering (DSG), also known as patterned heteroepitaxial processing (PHeP). This gettering approach involves the glide of dislocations toward sidewalls, where they become trapped by image forces. Simple quantitative models have been developed for DSG, but they fail to explain why only partial removal of dislocations was observed in ZnSSe/GaAs (001) whereas complete removal has been achieved in ZnSe/GaAs (001) with higher lattice mismatch. Until now this phenomenon has been qualitatively explained by the presence of sessile dislocations. Here we present a quantitative model for pinning interactions and show that these interactions can limit the growth of misfit dislocation segments and thereby reduce the effectiveness of DSG in ZnS y Se 1-y /GaAs (001) relative to ZnSe/GaAs (001).

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“…The foundation for the dislocation dynamics model used in this work is derived in. 2 The model predicts lattice relaxation and threading dislocation behavior in heteroepitaxial layers of arbitrary thickness and compositional profile. In a general semiconductor heterostructure with lattice mismatch profile ) ( y f , the rate of lattice relaxation at a distance y from the interface is determined by the glide of dislocations in the underlying material, and is given by…”

Section: Dislocation Dynamics Modelmentioning

confidence: 99%

“…The first term in (15) The values adopted in this work are summarized in. 2 To investigate this dislocation compensation mechanism we modeled the threading dislocation behavior of the ZnS x Se 1-x /GaAs (001) heterostructures. The assumed growth temperature was 360 o C and the mean parameter µ was fixed at half the buffer layer thickness.…”

Section: Dislocation Dynamics Modelmentioning

confidence: 99%

“…Metamorphic devices which have been fabricated on lattice-mismatched substrates include InGaAs/InAlAs HEMTs on GaAs, 3 InGaAs/InAlAs heterojunction bipolar transistors (HBTs) on GaAs, 4 InGaAs/InP HEMTs and HBTs on GaAs, 5 InAlAs photodiodes on GaAs, 6 InAsSb/AlInAsSb light-emitting diodes (LEDs) on GaSb, 7 AlInGaAsSb laser diodes on GaSb, 8 InGaAs/InAlGaAs laser diodes on GaAs, 9 InGaAsSb/InAlAs quantum cascade laser structures on GaAs, 10 and InAlAs solar cells on GaAs. 11 Most work has focused on linearly-graded buffer layers, [2][3][4][5][6][7][8][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30] while there have been several reports of the use of step-graded buffer layers 12,[31][32][33][34] or buffer layers with T. Kujofsa continuous, but non-linear grading of composition. 11,[35][36][37] Tersoff's work …”

Section: Introductionmentioning

confidence: 99%

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Threading Dislocations in S-Graded ZnS_xSe_1-x/GaAs (001) Metamorphic Buffer Layers

Kujofsa

Ayers

2014

Int. J. Hi. Spe. Ele. Syst.

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Metamorphic semiconductor devices are commonly fabricated with linearly-graded buffer layers, but equilibrium modeling studies suggest that S-graded buffers, following a normal cumulative distribution function, may enable lower threading defect densities. The present work involves a study of threading dislocation density behavior in S-graded ZnSxSe1-x buffer layers for metamorphic devices on mismatched GaAs (001) substrates using a kinetic model for lattice relaxation and misfitthreading dislocation interactions. The results indicate that optimization of an S-graded buffer layer to minimize the surface threading dislocation density requires adjustment of the standard deviation parameter and cannot be achieved by varying the buffer thickness alone. Furthermore, it is possible to tailor the design of the S-graded buffer layer in such a way that the density of mobile threading dislocations at the surface vanishes. Nonetheless, the threading dislocation behavior in these heterostructures is quite complex, and a full understanding of their behavior will require further experimental and modeling studies.

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Plastic Flow and Dislocation Compensation in ZnS y Se1−y /GaAs (001) Heterostructures

Cited by 28 publications

References 27 publications

Thin-Film InGaAs Metamorphic Buffer for telecom C-band InAs Quantum Dots and Optical Resonators on GaAs Platform

Thin-Film InGaAs Metamorphic Buffer for telecom C-band InAs Quantum Dots and Optical Resonators on GaAs Platform

Dislocation Sidewall Gettering in II-VI Semiconductors and the Effect of Dislocation Pinning Interactions

Threading Dislocations in S-Graded ZnS_xSe_1-x/GaAs (001) Metamorphic Buffer Layers

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Plastic Flow and Dislocation Compensation in ZnS y Se1−y /GaAs (001) Heterostructures

Cited by 28 publications

References 27 publications

Thin-Film InGaAs Metamorphic Buffer for telecom C-band InAs Quantum Dots and Optical Resonators on GaAs Platform

Thin-Film InGaAs Metamorphic Buffer for telecom C-band InAs Quantum Dots and Optical Resonators on GaAs Platform

Dislocation Sidewall Gettering in II-VI Semiconductors and the Effect of Dislocation Pinning Interactions

Threading Dislocations in S-Graded ZnSxSe1-x/GaAs (001) Metamorphic Buffer Layers

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Product

Resources

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Threading Dislocations in S-Graded ZnS_xSe_1-x/GaAs (001) Metamorphic Buffer Layers