Plasmonically Enhanced Amorphous Silicon Photodetector With Internal Gain

Yu, Yugang; Xu, Zihan; Li, Shilong; Zhang, Alex Ce; Yan, Lujiang; Liu, Zhaowei

doi:10.1109/lpt.2019.2914428

Cited by 8 publications

(1 citation statement)

References 16 publications

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“…To overcome the recovery time limitations associated with standard PC switching, devices have been fabricated using a variety of unconventional semiconductor materials some of which include amorphous Si [4], low temperature (LT) molecular beam epitaxy (MBE ) grown GaAs [5], [6], and radiation damaged (RD) Si on sapphire (SOS) [7]. The fabrication processes for the amorphous Si devices (thermal decomposition of silane through chemical vapour deposition (CVD) [4], the LT GaAS devices (MBE growth at 200 0 C on semi insulating GaAs) [8], and the RD SOS devices (ion implantation with 200 keV O + ions at 1 x 10 14 cm 2 and 100 keV O + ions at 1 x 10 15 cm 2 ) [9] serve to introduce carrier traps and recombination centres within the lattice to inhibit the continuation of charge carrier transport. The carrier lifetime within the device is reduced, therefore, and the generated electrical transient is terminated (here the convention has been adopted that the term lifetime refers to both carrier recombination).…”

Section: Introductionmentioning

confidence: 99%

Generation and Detection of Terahertz Electrical Waveforms

Uzorka¹,

Makeri²,

Kibirige³

et al. 2022

Preprint

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This paper presents theoretical and experimental work on development of Tetrahertz (THz) generation and detection schemes. Here, the PC THz generation processes are applied to the formation of transmission line coupled THz electrical waveforms. After a brief explanation of the experimental setup employed, the concept of PC self-switching is introduced through theoretical and experimental work on coplanar gallium arsenide (GaAs) PC self-switching. Here, it is shown that ultrashort THz electrical pulses can be formed on transmission lines through a time delayed multi switching process. The coplanar PC switch was presented to explain the operation of the device. By employing sufficiently short electrode spacings, it was found that the operation of the device could be extended into the THz frequency domain.

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