Plasmonic properties of asymmetric dual grating gate plasmonic crystals

Karabiyik, Mustafa; Ahmadivand, Arash; Raju, Salahuddin; Al-Amin, Chowdhury; Vabbina, Phani Kiran; Kaya, Serkan; Rupper, G.; Rudin, S.; Shur, M. S.; Pala, Nezih

doi:10.1002/pssb.201552609

Cited by 10 publications

(8 citation statements)

References 20 publications

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“…The ideas to improve both detection and emission of the sub-THz and THz radiation by TeraFETs focused on several approaches: moving from a single TeraFET to a "plasmonic crystal" [15,16], using the TeraFET asymmetric multi-gate structure [17,18] and, more recently, using "plasmonic stubs" -narrow regions protruding from the channel and having tunable electrical parameters [19,20]. The stubs allow for an optimization and adjustment of the boundary conditions at the contacts and/or at the interfaces between different plasmonic cavities [19] providing more favorable conditions for the DS instability.…”

Section: Introductionmentioning

confidence: 99%

Plasmonic instabilities in two-dimensional electron channels of variable width

2020

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Understanding of fundamental physics of plasmonic instabilities is the key issue for the design of a new generation of compact terahertz electronic sources required for numerous THz applications. Variable width plasmonic devices have emerged as potential candidates for such an application. The analysis of the variable width plasmonic devices presented in this paper shows that these structures enable both the Dyakonov-Shur instability (when the electron drift velocity everywhere in the device remains smaller than the plasma velocity) and the "plasmonic boom" instability that requires drift velocity exceeding the plasma velocity in some of the device sections. For symmetrical structures, the driving current could be provided by an RF signal leading to RF to Terahertz (THz) and THz to RF frequency conversion using the source and drain antennas and reducing losses associated with ohmic contacts. We show that narrow regions protruding from the channel ("plasmonic stubs") could control and optimize boundary conditions at the contacts and/or at the interfaces between different device sections. These sections could be combined into plasmonic crystals yielding enhanced power and a better impedance matching. The mathematics of the problems is treated using the transmission line analogy. We show that the combination of the stubs and the variable width channels is required for the instability rise in an optimized plasmonic crystal. Our estimates show that THz plasmonic crystal oscillators could operate at room temperature.

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Section: Introductionmentioning

confidence: 99%

Plasmonic instabilities in two-dimensional electron channels of variable width

2020

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“…Grated gate structures [ 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 77 , 78 , 89 , 90 , 91 ] demonstrated a better performance compared to single TeraFETs and a promise of THz radiation. Most of the room temperature results are for damped plasma wave detection by field-effect transistors.…”

Section: Plasmonic Terafetsmentioning

confidence: 99%

“…Among the technologies to support such a transition, the plasmonic crystal technology has the potential to become a winner. A unit cell of such a crystal has small dimensions to support the ballistic or quasi-ballistic transport and plasmonic resonances, while the overall size of the crystal is sufficiently large to efficiently capture or emit a sub-THz or a THz beam (see Figure 2 ) [ 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 ].…”

Section: Introductionmentioning

confidence: 99%

Plasmonic Field-Effect Transistors (TeraFETs) for 6G Communications

Shur

Aǐzin

Otsuji

et al. 2021

Sensors

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Ever increasing demands of data traffic makes the transition to 6G communications in the 300 GHz band inevitable. Short-channel field-effect transistors (FETs) have demonstrated excellent potential for detection and generation of terahertz (THz) and sub-THz radiation. Such transistors (often referred to as TeraFETs) include short-channel silicon complementary metal oxide (CMOS). The ballistic and quasi-ballistic electron transport in the TeraFET channels determine the TeraFET response at the sub-THz and THz frequencies. TeraFET arrays could form plasmonic crystals with nanoscale unit cells smaller or comparable to the electron mean free path but with the overall dimensions comparable with the radiation wavelength. Such plasmonic crystals have a potential of supporting the transition to 6G communications. The oscillations of the electron density (plasma waves) in the FET channels determine the phase relations between the unit cells of a FET plasmonic crystal. Excited by the impinging radiation and rectified by the device nonlinearities, the plasma waves could detect both the radiation intensity and the phase enabling the line-of-sight terahertz (THz) detection, spectrometry, amplification, and generation for 6G communication.

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“…The attempts to increase the responsivity involve using the ratchet effect [121][122][123][124][125][126], grated gate structures [105][106][107], [127][128][129][130][131], plasmonic boom [132,133], and variable width devices [114]. We call such structures plasmonic crystals with the unit cells smaller or comparable to the mean free path but capable of capturing and processing a larger THz flux.…”

Section: Sources and Detectorsmentioning

confidence: 99%

Terahertz Plasmonic Technology

Shur

2021

IEEE Sensors J.

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The terahertz (THz) technology has found applications ranging from astronomical science and earth observation to compact radars, nondestructive testing, chemical analysis, explosive detection, moisture content determination, coating thickness control, film uniformity determination, , structural integrity testing , wireless covert communications, medical applications , (including skin cancer detection), imaging, and concealed weapons detection. Beyond 5G Wi-Fi and Internet of Things (IoT) are the expected killer applications of the THz technology. Plasmonic TeraFETs such as Si CMOS with feature sizes down to 3 nm could enable a dramatic expansion of all these applications. At the FET channel sizes below 100 nm, the physics of the electron transport changes from the collision dominated to the ballistic or quasi-ballistic transport. In the ballistic regime, the electron inertia and the waves of the electron density (plasma waves) determine the high frequency response that extends into the THz range of frequencies. The rectification and instabilities of the plasma waves support a new generation of THz and sub-THz plasmonic devices. The plasmonic electronics technology has a potential become a dominant THz electronics sensing technology when the plasmonic THz sources join the compact, efficient, and fast plasmonic TeraFET THz detectors already demonstrated and being commercialized.

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Plasmonic properties of asymmetric dual grating gate plasmonic crystals

Cited by 10 publications

References 20 publications

Plasmonic instabilities in two-dimensional electron channels of variable width

Plasmonic instabilities in two-dimensional electron channels of variable width

Plasmonic Field-Effect Transistors (TeraFETs) for 6G Communications

Terahertz Plasmonic Technology

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