Plasmonic nano-arrays for enhanced photoemission and photodetection

Piltan, Shiva; Sievenpiper, Daniel F.

doi:10.1364/josab.35.000208

Cited by 20 publications

(23 citation statements)

References 38 publications

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“…This happens despite the low photon energy, which is noticeably less than the work function φ0. The results provided in the recent works [5,12,13,25,26] demonstrate the experimental observation of the tunnel photoemission. It is obvious that efficiency of the analyzed structure of the photosensor will improve if an additional adjustment element is introduced that ensures implementation of the matching principle to the localization zones of the absorbed optical and electrostatic fields.…”

Section: A Model For the Tunnel Photocurrent Within The Structuresupporting

confidence: 60%

“…This happens despite the low photon energy, which is noticeably less than the work function ϕ 0 . The results provided in the recent works [5,12,13,25,26] demonstrate the experimental observation of the tunnel photoemission.…”

Section: A Model For the Tunnel Photocurrent Within The Structuresupporting

confidence: 60%

“…Typically, any photosensing device converts the incoming light to an electrical signal on the basis of photon absorption by a photosensitive material, with conversion of an optical into an electric signal realized. Important applications of such units as high-speed information transceivers and communication networks [2,3], various types of remote sensing using the photosensitive matrices [4], and ultrafast sources of hot electrons in vacuum microelectronics devices [5,6] should be mentioned.…”

Section: Introductionmentioning

confidence: 99%

“…Only using the surface plasmon resonance and/or deformation of the Schottky barrier at the metal-vacuum interface, the desired result can be achieved. In particular, this approach was successfully applied using nanosized gold plasmon structures [5,6]. The periodicity of the arrays of planar emitters [5] and bulk emitters [6,12] was reduced to 1 µm; this value corresponds to the marginal possibilities of modern technologies based on the e-beam lithography.…”

Section: Introductionmentioning

confidence: 99%

“…In particular, this approach was successfully applied using nanosized gold plasmon structures [5,6]. The periodicity of the arrays of planar emitters [5] and bulk emitters [6,12] was reduced to 1 µm; this value corresponds to the marginal possibilities of modern technologies based on the e-beam lithography. The gaps between the emitters were equal to 200 nm in the case of the planar structure, and 150 nm in the case of the bulk emitters.…”

Section: Introductionmentioning

confidence: 99%

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A Visible and Near-IR Tunnel Photosensor with a Nanoscale Metal Emitter: The Effect of Matching of Hot Electrons Localization Zones and a Strong Electrostatic Field

et al. 2019

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The results of the research and design of a novel vacuum photosensor with a planar molybdenum blade structure are presented. The advanced prototype implements the principle of an increasing penetrability of the Schottky barrier for the metal–vacuum interfaces under the action of an external strong electrostatic field. Theoretical and experimental substantiation of the photosensor performance in a wide range of wavelengths (from 430 to 680 nm and from 800 to 1064 nm) beyond the threshold of the classical photoelectric effect is given. The finite element method was applied to calculate distribution of the optical and electrostatic fields inside the photosensor structure. The sensor current-to-light response was studied using the periodic pulsed irradiation with the tunable wavelength. It was shown that the nanoscale localization zones of two types are formed near the surface of the blade tip: the zone of an increased concentration of hot electrons localized inside the molybdenum blade, and the zone with an increased strength of the external electrostatic field localized outside the blade. In general, the mutual positions of these zones may not coincide, whereas the position of the first-type localization zone significantly varies with the changes in the wavelength of the irradiating light. This causes features in the spectrum of the quantum yield of the photosensor such as expressed non-monotonic behavior and occurrence of sharp dips. The design of the photosensor that provides matching of the positions for both types of localization zones was proposed; the manufactured prototypes of the designed device were experimentally studied. In the designed photosensor, the ballistic transport of photoelectrons in the vacuum gap with a strong field provides a possibility for the creation of ultra-fast optoelectronic devices, such as modulators, detectors, and generators.

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