Plasmonic metal nanostructures with extremely small features: new effects, fabrication and applications

Abstract

Surface plasmons in metals promise bunches of interesting and fascinating properties and applications in optics, sensing, photonics and nonlinear fields. Plasmonic nanostructures with extreme small features especially demonstrate amazing new...

Correlating structure, morphology and properties of metal nanostructures by combining single-particle optical spectroscopy and electron microscopy

“…The actual correlation can be done by pattern recognition 87 or careful patterning of the substrates. 88 A detailed correlation between optical properties and subnm features of metal NSs, 89,90 such as sub-nm gap size and NS morphology, [91][92][93][94][95][96][97] can be achieved in this manner. This is particularly important for understanding charge transfer in metal NSs, either through direct contact or electron tunneling.…”

Enhancement of Schottky Junction Silicon Solar Cell with CdSe/ZnS Quantum Dots Decorated Metal Nanostructures

“…Besides, the solar spectra region of the surface plasmon resonance wavelength (λ SPR ) is strongly dependent on the size, shape, and concentration of MNS. Particularly, metal nanoparticles (MNPs) become very attractive due to their flexibility, straightforward synthetic, and high-uniform contribution [11,12]. Small sizes of MNPs (below 50 nm) are supposed to induce the intensive near-field localization; then, generate the light scattering in the board area of solar spectra [13,14].…”

Sub-5 nm Anisotropic Pattern Transfer via Colloidal Lithography of a Self-Assembled GdF3 Nanocrystal Monolayer

“…Ongoing efforts aim to realize patterning below 5 nm to extend Moore's law for integrated circuit technology and memory devices. The ability to fabricate features or their spacings below 5 nm would also advance research for the development of metasurfaces, 4,5 optoelectronic devices, 6 and quantum technologies. 7−9 However, it is unclear whether EUV lithography can reliably pattern features below 5 nm, 10,11 and the extremely high cost of EUV systems is prohibitive for research purposes that require prototyping or for small-volume production markets.…”

“…[4] The underlying Si substrate is then etched using Cl 2 / Ar ICP RIE to transfer the anisotropic pattern. [5] The NC mask layer is removed via liftoff of the underlying SiO 2 layer using a 10% HF wet etch. The magnified view of the patterned substrate shows lateral dimensions A, B, C, and D, which are set by the NC mask size, spacing s, which is set by the interparticle spacing of the NC assembly, and etch depth d, which is determined by the dry etch conditions.…”

“…An O 2 descum process is used to remove the ligands and any residual organic material; then the thin SiO 2 layer is etched in regions between the NCs using a short CF 4 /O 2 ICP RIE [4]. The underlying Si substrate is then etched using Cl 2 / Ar ICP RIE to transfer the anisotropic pattern [5]. The NC mask layer is removed via liftoff of the underlying SiO 2 layer using a 10% HF wet etch.…”