Plasmonic hot carrier injection from single gold nanoparticles into topological insulator Bi₂Se₃ nanoribbons

Abstract

Plasmonic gold nanoparticles injecting hot carriers into the topological insulator (TI) interface of Bi2Se3 nanoribbons are studied by resonant Raman spectroscopy. We resolve the impact of individual gold particles with...

Distinct Quantum States in Topological Insulator Surfaces of Nanowires and Nanoribbons of Bismuth Selenide (Bi2Se3)

“…The Raman tensors in Bi 2 Se 3 and the atomic displacements of the Raman‐active modes are well known. [ 32 ] The commonly grown morphologies of Bi 2 Se 3 G1D nanostructures are nanowires (NWs) and nanoribbons (NRs) as shown in Figure 1a,b. We earlier mentioned the observation of AB oscillations originating from the surface state of G1D TI.…”

“…Detailed information on the synthesis and characterization of the AuNPs has been reported previously. [32,51] Exemplary SEM and TEM images of the studied nanostructures are shown in the Supporting Information. A custom-made piezo-controlled micro-Raman setup was used (see Supporting Information).…”

“…In Figure 2a, we observe two distinct phonon modes that we can assign to E 2 g and A 2 1g symmetry in line with the Raman tensor. [35] The spectra were fitted with the generalized Fano equation, [32] (Equation 2).…”

“…As shown in our previous work, hot charge carrier injection from individual gold nanoparticles attached to a surface of single TI nanoribbons results in an enhanced Raman intensity. [ 32 ] This leads to a new technique using plasmonic nanoparticles in Raman spectroscopy to unmask the geometric nature of TI surfaces of 1D materials.…”

Photoemission Enhancement of Plasmonic Hot Electrons by Au Antenna–Sensitizer Complexes

“…Plasmonic hot electrons can overcome or tunnel through energy barriers, allowing them to transfer to nearby objects. Plasmonic metal nanostructures are therefore promising candidates for plasmonic catalysis − and photovoltaics. − When metal nanoantennas come into contact with semiconductive materials such as silicon (Si) or titanium dioxide (TiO 2 ), a Schottky barrier is usually formed depending on the materials’ work functions. When excited by light, LSPR-induced hot electrons can have enough energy to pass this barrier and be injected from the metal to the semiconductor, , generating a photocurrent known as light harvesting. ,− Theoretical studies have shown that the photoemission efficiency of LSPR-induced hot electrons through a Schottky barrier of approximately 0.9 eV is generally limited to about 8% .…”