Plasmonic Energy Collection through Hot Carrier Extraction

Wang, Fuming; Melosh, Nicholas A.

doi:10.1021/nl203196z

Cited by 253 publications

(244 citation statements)

References 28 publications

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“…Besides the larger electric fi eld enhancements, Ag nanocrystals also exhibit higher refractive index sensitivities [ 25 , 26 ] and larger solar energy conversion effi ciencies than Au nanocrystals. [ 14 ] Moreover, compared to gold, silver has a higher interband transition energy and is able to support localized plasmon resonances in the near-ultraviolet spectral range. Ag nanocrystals are therefore very attractive in various plasmonic applications.…”

Section: Doi: 101002/adma201201896mentioning

confidence: 99%

Unraveling the Evolution and Nature of the Plasmons in (Au Core)–(Ag Shell) Nanorods

et al. 2012

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Evolution of the sizes and plasmonic properties of (Au core)−(Ag shell) nanorods is studied. Four plasmon bands are observed on the core−shell nanorods and their properties are investigated. The lowest‐energy one belongs to the longitudinal dipolar plasmon mode, the second‐lowest‐energy one belongs to the transverse dipolar plasmon mode, and the two highest‐energy ones are ascribed to octupolar plasmon modes.

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Section: Doi: 101002/adma201201896mentioning

confidence: 99%

Unraveling the Evolution and Nature of the Plasmons in (Au Core)–(Ag Shell) Nanorods

et al. 2012

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“…Tandemstructured devices with double Schottky barriers can also be used to further enhance hot electron collection efficiency [102]. An alternative approach to extracting hot electrons is to form a metal-insulator-metal diode [47,83,84,[103][104][105][106][107]. MIM diodes have been used as "rectennas" [108] at infrared and lower frequencies for power conversion and transmission.…”

Section: Free-space Photodetectorsmentioning

confidence: 99%

“…This can be done by creating asymmetric absorption, creating asymmetric barrier heights using different metals, or applying a bias to the device. In 2011, a hot electronbased MIM device [104] was proposed using an Au-Al 2 O 3 -Au diode for the application of solar energy conversion and photodetection ( Figure 3C). In this planar unpatterned diode, a Kretschmann prism coupling configuration was used to couple the incident light to one of the electrodes, creating asymmetric absorption.…”

Section: Free-space Photodetectorsmentioning

confidence: 99%

“…Because the absorption of TCO is small, most of the incident light is absorbed in the metal layer and in the vicinity of the metal-insulator/semiconductor interface, leading to highly asymmetric and efficient hot carrier generation [111]. Therefore, opposed to planar MIM diodes [104], special coupling is not necessary. The TCO-based structures have been demonstrated to produce responsivity up to 70 mA/W under a reverse bias of −3 V in the visible regime [112] (Figure 3F).…”

Section: Free-space Photodetectorsmentioning

confidence: 99%

“…MIM diodes can be built on a wider range of devices such as polymer waveguides and optical fiber. In addition, multiple metal contacts [87,[120][121][122] are not required here, simplifying the geometry [47,104], although quantum efficiency suffers when compared to a Schottky diode. …”

Section: On-chip Photodetectorsmentioning

confidence: 99%

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Harvesting the loss: surface plasmon-based hot electron photodetection

2016

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Abstract:Although the nonradiative decay of surface plasmons was once thought to be only a parasitic process within the plasmonic and metamaterial communities, hot carriers generated from nonradiative plasmon decay offer new opportunities for harnessing absorption loss. Hot carriers can be harnessed for applications ranging from chemical catalysis, photothermal heating, photovoltaics, and photodetection. Here, we present a review on the recent developments concerning photodetection based on hot electrons. The basic principles and recent progress on hot electron photodetectors are summarized. The challenges and potential future directions are also discussed.

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Plasmonic Internal Photoemission for Accurate Device In Situ Measurement of Metal‐Organic Semiconductor Injection Barriers

Dhanker

Chopra

Giebink

2014

Adv Funct Materials

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4775www.MaterialsViews.com wileyonlinelibrary.com the challenge of independently and reliably measuring key parameters such as the injection energy barrier directly in the device geometries in which currentvoltage ( J -V ) characteristics are measured.Ultraviolet photoelectron spectroscopy (UPS) is arguably the most successful and widely used method for determining energy level alignment at MO interfaces, [8][9][10] however the energetics deduced from this method as well as its inverse counterpart are not in general the same as that in an actual device due to the difference between surface and bulk polarization energies. [ 9,10 ] That is, the energy of a charge carrier near an MO interface is stabilized by polarization and lattice relaxation of the surrounding molecules and the adjacent metal (≈0.5-1 eV), whereas surface-specifi c techniques such as UPS, Kelvin probe and scanning tunneling microscopy all measure the energy of charge carriers at an organic fi lm surface, stabilized only by polarization from the underlying half-space.Internal photoemission (IPE) by contrast is carried out directly in the device of interest (i.e., device in situ) and is well established for measuring the injection barrier at metalinorganic semiconductor contacts. [ 11,12 ] In this approach, the metal contact is illuminated directly with visible/near infrared light below the semiconductor bandgap leading to the excitation of hot carriers in the metal. Those carriers with suffi cient energy and momenta to surmount the injection barrier, B φ , are emitted into the semiconductor resulting in a photocurrent with yield per absorbed photon, Y , according to the Fowler relationship: [ 13 ] where A is a constant that refl ects the strength of the involved optical transitions. Internal photoemission has previously been applied to MO interfaces, [ 14,15 ] however as demonstrated below, interpretation of the data is complicated by the fact that disorder and impurities in organic semiconductors lead to low-level absorption tails extending deep into the optical gap. This sub-gap absorption, together with photo-detrapping transitions within the disorder-broadened highest occupied (HOMO) and lowest unoccupied molecular orbital (LUMO) transport levels leads to a background photocurrent that is diffi cult to Current injection in organic semiconductors remains diffi cult to predict due in large part to the challenge of characterizing the contact energy barrier and interface density of states directly in organic electronic devices. Here, resonant coupling to surface plasmon polariton modes of a metal contact is demonstrated as a means to carry out internal photoemission (IPE) accurately in disordered organic semiconductor devices and enable direct measurement of the contact injection barrier by isolating true IPE from spurious sub-gap organic photoconductivity. The substantial increase in sensitivity afforded by resonant coupling enables measurement in the low-fi eld injection regime where deviation from the standard Fowler prediction is explained q...

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Plasmonic Energy Collection through Hot Carrier Extraction

Cited by 253 publications

References 28 publications

Unraveling the Evolution and Nature of the Plasmons in (Au Core)–(Ag Shell) Nanorods

Unraveling the Evolution and Nature of the Plasmons in (Au Core)–(Ag Shell) Nanorods

Harvesting the loss: surface plasmon-based hot electron photodetection

Plasmonic Internal Photoemission for Accurate Device In Situ Measurement of Metal‐Organic Semiconductor Injection Barriers

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