2020
DOI: 10.1515/nanoph-2019-0518
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Plasmonic electro-optic modulator based on degenerate semiconductor interfaces

Abstract: AbstractWe present a semiconductor-based optoelectronic switch based on active modulation of surface plasmon polaritons (SPPs) at lattice-matched indium gallium arsenide (In0.53Ga0.47As) degenerately doped pn++ junctions. The experimental device, which we refer to as a surface plasmon polariton diode (SPPD), is characterized electrically and optically, showing far-field reflectivity modulation for mid-IR wavelengths… Show more

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Cited by 8 publications
(9 citation statements)
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“…In this work, we present a significant step towards realizing a complete semiconductorbased plasmonic switch referred to as a Surface Plasmon Polariton Diode (SPPD) [62][63][64][65]. Here, we build upon our past work [65], where we have demonstrated excitation and modulation of SPPs modes at the interface of the degenerately doped lattice-matched Indium Gallium Arsenide (In0.53Ga0.47As) PN ++ -junctions grown epitaxially on Indium Phosphide (InP) and proceed to the next important step by experimentally demonstrating the temporal response of the device. Small signal frequency response measurements are performed, clearly demonstrating frequency dependent optical modulation (switching) of SPP modes at the PN ++ junction.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…In this work, we present a significant step towards realizing a complete semiconductorbased plasmonic switch referred to as a Surface Plasmon Polariton Diode (SPPD) [62][63][64][65]. Here, we build upon our past work [65], where we have demonstrated excitation and modulation of SPPs modes at the interface of the degenerately doped lattice-matched Indium Gallium Arsenide (In0.53Ga0.47As) PN ++ -junctions grown epitaxially on Indium Phosphide (InP) and proceed to the next important step by experimentally demonstrating the temporal response of the device. Small signal frequency response measurements are performed, clearly demonstrating frequency dependent optical modulation (switching) of SPP modes at the PN ++ junction.…”
Section: Introductionmentioning
confidence: 99%
“…This charge injection process results in modifying the P-layer's permittivity 𝜖 𝑝 . When applying external bias 𝑉 > 𝑉 𝑐 , where 𝑉 𝑐 is a critical voltage [65], some portion of the P-layer can acquire metal-like characteristics with 𝜖 𝑝 < 0, which results in hindering the propagation of the SPP modes within the active drift-diffusion region. This state of the device is considered as the 'OFF' state.…”
Section: Introductionmentioning
confidence: 99%
“…Based on these, they utilized the advantage of the selective light absorption and scattering of plasmonic metamaterial structures, local electric field constraints, and other properties to enhance light-matter interactions. It has been widely used in light modulator [36][37][38][39], light detector [40,41], photovoltaic solar energy [42,43], biological refractive index sensor [44,45], surface plasmon laser [46][47][48], photochemical catalysis [49,50], surface enhanced Raman spectroscopy [51,52], and optical holographic imaging [53,54]. With the development of theoretical research, plasmonic metamaterials have more overlaps with biology, chemistry, energy, electronics, materials, and other disciplines.…”
Section: Introductionmentioning
confidence: 99%
“…Various applications of photonic devices are also discussed in this issue, such as highly sensitive sensors [8,9], a nonlinear optical device [10], a plasmonics electro-optic device [11], and a multipole engineering method [12]. Qian et al [8] propose an inexpensive and easy-to-fabricate fiber-optic localized surface plasmon resonance (SPR) sensor to detect charge and discharge processes in supercapacitors.…”
mentioning
confidence: 99%
“…Fujii and Tanabe [10] review the nonlinear optics of whispering-gallery-mode microresonators, focusing on dispersion engineering, calculation method, and measurement method for the generation of Kerr-frequency combs. Vinnakota et al [11] present a semiconductor-based optoelectronic switch for functional plasmonic circuits; the active modulation of surface plasmon polaritons allows switching rates up to 1 Gb/s and therefore shows the potential to achieve high data rates and fast optoelectronic devices. Liu et al [12] comprehensively review the topic of multipole and multimode engineering in metasurface devices; these concepts can be applied in various nontrival intermodal couplings as well as multipolar interferences of meta-atoms and meta-molecules.…”
mentioning
confidence: 99%