Plasmon Standing Waves by Oxidation of Si(553)–Au

Mamiyev, Zamin; Tzschoppe, Michael; Huck, Christian; Pucci, Annemarie; Pfnür, H.

doi:10.1021/acs.jpcc.9b01372

Cited by 16 publications

(19 citation statements)

References 34 publications

(118 reference statements)

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“…Indeed, adsorption of gases becomes relevant and further widens the possibilities to change the interaction of wires with the substrate as well as their mutual coupling. Attempts in this direction have been recently undertaken. − …”

Section: Introductionmentioning

confidence: 99%

Plasmon Localization by H-Induced Band Switching

Mamiyev

Sanna²,

Ziese³

et al. 2019

J. Phys. Chem. C

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The strong sensitivity of plasmonic excitations on nanostructures to their environment is studied, going to the ultimate limit of single atomic chains. As a first step, we investigated how metallicity in self-assembled arrays of Au chains on Si(557) is modified by the simplest possible adsorbate, namely, atomic hydrogen. Both experimental studies and ab initio simulations were carried out combining plasmon spectroscopy with atomistic first-principles density functional calculations (DFT). While metallicity, in general, is only distorted by H-induced disorder, we also observed band gap opening in the measured plasmon dispersion at large momenta, k ∥, that limits the plasmonic excitation to an energy of 0.43 eV in the presence of H. In the long-wavelength limit, disorder leads to plasmonic standing wave formation on short sections of wires and finite excitation energies for k ∥ → 0. DFT shows that Si surface bands strongly hybridize with those of Au so that H adsorption on the energetically most favorable sites at the Si step edge and the restatom chain not only causes a significant shift of bands but also strongly changes the character of hybridization. Together with H-induced changes in band order, this causes band gap opening and reduced overlap of wave functions. These mechanisms were identified as the main reasons for plasmon localization. Interestingly, although the whole electronic system is modified by H adsorption, there is no direct interaction between H and the Au chains.

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Section: Introductionmentioning

confidence: 99%

Plasmon Localization by H-Induced Band Switching

Mamiyev

Sanna²,

Ziese³

et al. 2019

J. Phys. Chem. C

Self Cite

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“…Since then, numerous lines of research have emerged, dedicated to the investigation of the atomic structure, [ 18–21 ] lattice dynamics, [ 22 ] spin patterns, [ 23–25 ] phase transitions, [ 26,27 ] as well as electronic structure and its adsorption‐induced modifications. [ 28–32 ]…”

Section: Introductionmentioning

confidence: 99%

“…Changes in the geometry, electronic structure, and optical properties of the Si(553)–Au surface as a function of adsorbate deposition have been predicted with the help of DFT calculations and observed experimentally. [ 28,33,35–37 ] Atomic or molecular adsorption is known to induce a surface charge redistribution between the step edge and Au‐chain, which finds experimental support, e.g., by reflectance anisotropy spectroscopy (RAS) measurements during hydrogenation. [ 28,33,38 ]…”

Section: Introductionmentioning

confidence: 99%

“…[26] Changes in the geometry, electronic structure, and optical properties of the Si(553)-Au surface as a function of adsorbate deposition have been predicted with the help of DFT calculations and observed experimentally. [28,33,[35][36][37] Atomic or molecular adsorption is known to induce a surface charge redistribution between the step edge and Au-chain, which finds experimental support, e.g., by reflectance anisotropy spectroscopy (RAS) measurements during hydrogenation. [28,33,38] In this work, we explore the impact of two different types of adsorbates that have been the subject of a previous ab initio calculation study: molecular H and toluene-3,4-dithiol (TDT), an aromatic divalent thiol with two -SH ligands.…”

mentioning

confidence: 95%

“…Since then, numerous lines of research have emerged, dedicated to the investigation of the atomic structure, [18][19][20][21] lattice dynamics, [22] spin patterns, [23][24][25] phase transitions, [26,27] as well as electronic structure and its adsorptioninduced modifications. [28][29][30][31][32] According to our current knowledge of the system, the hightemperature phase of the Si(553)-Au surface is stable from room temperature down to about 120 K. It consists of a double Au…”

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confidence: 99%

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Adsorbate‐Induced Modifications in the Optical Response of the Si(553)–Au Surface

Chandola

Sanna

Hogan

et al. 2022

Physica Rapid Research Ltrs

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atoms on selected semiconducting surfaces leads to a variety of ordered, atomic-scale chain structures. [1][2][3][4][5][6][7][8][9][10][11] Au-induced reconstructions on vicinal Si(111) surfaces have been studied intensively for years, as small coverages of Au stabilize the Si terraces by the formation of Au rows, which are expected to feature exciting physical properties such as quantization of conductance, spin-charge separation, charge and spin density waves, and Luttinger liquid behavior. [12][13][14][15][16] The Si(553)-(5 Â 2)-Au surface was first investigated by Crain et al., [17] and reported to show metallic states in the electronic band structure by angle-resolved photoemission spectrosopy. Since then, numerous lines of research have emerged, dedicated to the investigation of the atomic structure, [18][19][20][21] lattice dynamics, [22] spin patterns, [23][24][25] phase transitions, [26,27] as well as electronic structure and its adsorptioninduced modifications. [28][29][30][31][32] According to our current knowledge of the system, the hightemperature phase of the Si(553)-Au surface is stable from room temperature down to about 120 K. It consists of a double Au

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