Plasmon-enhanced high-performance Si-based light sources by incorporating alloyed Au and Ag nanorods

Abstract

Because of the limitation of low-efficiency, indirect bandgap, large lattice mismatch with other semiconductors, and low carrier mobility, developing efficient active region structures with nanostructured metals is of great technical...

Enhanced luminescence/photodetecting bifunctional devices based on ZnO:Ga microwire/p-Si heterojunction by incorporating Ag nanowires

“…3(d) (the input current of 45 mA). 7,22,49 The influence of AgNWs on the light-emission properties is consistent with the increased emission intensity for the fabricated LEDs. Thus, the remarkably increased light-emission of the Si-based LEDs has been realized via AgNWs deposition.…”

“…26,46 Meanwhile, a negligible visible emission was also collected, which might originate from the Ga-doping induced impurity-related levels or intrinsic defects. 7,24 By incorporating AgNWs, the ultraviolet light-emitting has gained observably increased, and the enhanced ratio is extracted to about 3.8 times (See Fig. 1(i), the blue solid line).…”

“…Clearly, the dominating EL peaks locate at ∼ 680 nm, originating from the depletion layer around the heterointerface of ZnO:Ga wire and p-Si crystal wafer. 7,22 To research the influence of AgNWs on the device performance, the same wire deposited with AgNWs was further applied to construct the device, and the I-V curve was measured, as exhibited in Fig. 2(b) (the blue solid line).…”

“…Thus, the remarkably increased light-emission of the Si-based LEDs has been realized via AgNWs deposition. 7,22,50 3.2 Fabrication of n-ZnO:Ga MW/p-Si photodetector As we described above, the prepared n-ZnO:Ga MW/p-Si heterostructure illustrates typical p-n rectifying characteristics, especially for the much weak leakage current at the reverse bias range. When exposed under ultraviolet light at the wavelength of 370 nm, the fabricated heterojunction device exhibits significant photoresponse at the voltage of -1.0 V. The corresponding photodetecting characteristics of the fabricated n-ZnO:Ga MW/p-Si heterostructure are investigated.…”

“…Si-based materials and devices are one of basic building blocks of semiconductor electronics technology in the last half century, and have attracted extensive attentions on solar cells, light-emitting sources, photodiodes and so on. [1][2][3][4][5][6][7] Due to the low-cost, highabundance and desired electrical properties, Si-based structures are crucial issue to meet the needs of modern communication, processors, integrated circuits, etc. [8][9][10] However, limited by the low carrier mobility, indirect band structure and the insulating layer around the surfaces, one of the crucial challenges in Sibased optoelectronic devices is developing power-efficient, highspeed, integrated, and smart optoelectronic devices.…”