Plasma treatment studies of MIS devices

Abstract

Abstract:Silicon nitride films have emerged as the possible future dielectrics for ultra large scale integration (ULSI). Because the interface state density of silicon nitride/silicon interface in metal insulator semiconductor (MIS) configuration is more than an order of magnitude larger than that of silicon dioxide/silicon interface, plasma treatment studies on silicon nitride films have been undertaken for the possible improvement. Accordingly, silicon nitride films of various composition have been prepared by plasma enhanced chemical vapor deposition (PECVD) system using silane(SiH 4 ) and ammonia(NH 3 ) with nitrogen(N 2 ) as the diluent and MIS devices have been fabricated with as well as without plasma treated silicon nitride as the insulator. A considerable improvement in the silicon nitride/silicon interface is observed on ammonia plasma treatment while nitrous oxide(N 2 O) plasma treatment studies have resulted in the establishment of a novel plasma oxidation process. PACS

Impact of the CNT growth process on gold metallization dedicated to RF interconnect applications

“…The observed results have two possible explanations. (i) Reports have had shown that plasma had been used to improve silicon nitride properties or used to clean the Au surface from particles [28, 29]. In our case, plasma could help to improve the quality of the line by cleaning off native oxide or amorphous carbon.…”