The well-documented effect of film inhibition/perturbation that nitrogen molecules have in the plasma-assisted (PA)CVD of a-C/N:H films in a DC glow discharge reactor under low pressure is investigated. Plasma parameters, gas-phase composition, and film characteristics are recorded using several diagnostic techniques, including the newly developed cryo-trapping assisted mass spectrometry (CTAMS). Five gas mixtures are investigated; CH 4 /H 2 , CH 4 /N 2 /H 2 , and CH 4 /Ar/H 2 as precursors for the films, at low relative concentration of the hydrocarbon molecule (methane), and H 2 /N 2 and He/N 2 as film etchers. There are found to be strong differences in the composition of reaction product between systems in which plasma/surface interactions are dominated by ion-induced processes (sputtering), and those where chemical reactions with nitrogenated species would behave as scavengers of the film precursor. The implications of these findings for the proposed mechanisms of a-C/N:H film growth are addressed. The application of the scavenger technique for the inhibition of tritium-containing carbon co-deposits in the divertor region of fusion reactors, as an international thermonuclear experimental reactor (ITER) in the carbon-dominated scenarios, is analyzed in the light of these findings.