Plasma processes in methane discharges during r.f. plasma-assisted chemical vapour deposition of a-C:H thin films

Dekempeneer, E.; Smeets, J.; Meneve, J.; Eersels, L.; Jacobs, R. N.

doi:10.1016/0040-6090(94)90439-1

Cited by 19 publications

(12 citation statements)

References 13 publications

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“…Therefore the refractive index is used as an indication of the hardness. Note that the maximum refractive index is around 14 GPa, a value which is approximately 30% lower than the values obtained using the classical RF capacitively coupled plasma source [2,12].…”

Section: A-c:hmentioning

confidence: 91%

“…As mentioned, the perspective is, however, rewarding, because a better understanding of the deposition process could lead to an increase in deposition rate while maintaining or even improving the quality. The first widely applied plasma is the capacitively coupled RF plasma source [10,12,13]. In this type of plasma the excitation occurs usually at 13.56 MHz, which is applied to one of the electrodes.…”

Section: Deposition Methodsmentioning

confidence: 99%

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Deposition of a-Si:H and a-C:H using an expanding thermal arc plasma

Sanden

Severens

Gielen

et al. 1996

Plasma Sources Sci. Technol.

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Abstract. This paper deals with the deposition of a-C:H and a-Si:H using the expanding thermal arc technique. The method is compared with other deposition techniques. The basics of the technique are explained and recent results on the deposition of high-quality a-C:H and a-Si:H are discussed. It is shown that high rates, 7 nm s −1 for a-Si:H and 50 nm s −1 for a-C:H, are possible without loss of quality.

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Section: A-c:hmentioning

confidence: 91%

Section: Deposition Methodsmentioning

confidence: 99%

Deposition of a-Si:H and a-C:H using an expanding thermal arc plasma

Sanden

Severens

Gielen

et al. 1996

Plasma Sources Sci. Technol.

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“…Diamond-like carbon (DLC) layers can be deposited by cc rf discharges, operating both in methane (CH 4 ) [15] and in acetylene (C 2 H 2 ) [16]. We have therefore developed a fluid model for cc rf discharges in CH 4 and in C 2 H 2 plasmas, both in the pure feed gases as well as in mixtures with H 2 , Ar or He [17,18].…”

Section: Capacitively Coupled Radio-frequency (Cc-rf) Discharge In Hymentioning

confidence: 99%

Numerical modeling for a better understanding of gas discharge plasmas

et al. 2005

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We present here some of our modeling efforts for gas discharge plasmas, used in a number of applications in materials science. Different kinds of modeling approaches are applied, including fluid models, particle-in-cell -Monte Carlo (PIC-MC) models and hybrid Monte Carlo -fluid models, for the plasma behavior, as well as molecular dynamics simulations for thin film growth. The application fields include the deposition of amorphous hydrogenated carbon layers (diamond-like carbon) from hydrocarbon plasmas, the dust formation in silane discharges, the surface treatment with dielectric-barrier discharges, magnetron discharges used for sputter-deposition, dual-frequency capacitively coupled radiofrequency (cc-rf) discharges in CF 4 /Ar/N 2 , for etching applications, and glow discharges for spectrochemical analysis of materials.

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“…Microwave, pulsed, inductively coupled, or capacitively coupled rf discharges are used as plasma sources to assist the coating process. 2,3 The deposition rate and the uniformity of the DLC layers are two important parameters for industrial applications of the PECVD method. They directly depend on the operating conditions of the process.…”

Section: Introductionmentioning

confidence: 99%

Incorporating the gas flow in a numerical model of rf discharges in methane

Okhrimovskyy

Bogaerts

Gijbels

2004

Journal of Applied Physics

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A two-dimensional modified fluid model for a capacitively coupled rf discharge in methane, used for the deposition of diamond-like carbon layers, is presented. The gas velocity calculated with a computational fluid dynamics code is used as an input for the modified fluid model. Convection is taken into account as an additional transport mechanism as well as diffusion and migration. The calculations show that the gas flow results in a shift of the maximum of the densities of the plasma species toward the grounded electrode. It is shown that this shift has a large effect on the fluxes of the ions and radicals toward the substrate where the deposition occurs. As a result, the deposition rate will increase if the gas velocity has a component directed to the surface and it will decrease in the opposite case. However, the uniformity of the layer can become worse when the convection velocity is too high for the reactor geometry studied here.

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Plasma processes in methane discharges during r.f. plasma-assisted chemical vapour deposition of a-C:H thin films

Cited by 19 publications

References 13 publications

Deposition of a-Si:H and a-C:H using an expanding thermal arc plasma

Deposition of a-Si:H and a-C:H using an expanding thermal arc plasma

Numerical modeling for a better understanding of gas discharge plasmas

Incorporating the gas flow in a numerical model of rf discharges in methane

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