1982
DOI: 10.1016/0040-6090(82)90035-9
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Plasma oxidation

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Cited by 16 publications
(5 citation statements)
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“…When the gas-flow rate was 500 mL/min and the maximum current value was 32 mA, the dissolution ratio of Ce increased logarithmically with the plasma-irradiation time. This tendency was confirmed by plasma oxidation and indicates that the diffusion length from the surface is limited (Fromhold Jr., 1982). The same tendency was observed in a previous study (Suzuki et al, 2005).…”
Section: Plasma-irradiation Conditions For Chlorinationsupporting
confidence: 87%
“…When the gas-flow rate was 500 mL/min and the maximum current value was 32 mA, the dissolution ratio of Ce increased logarithmically with the plasma-irradiation time. This tendency was confirmed by plasma oxidation and indicates that the diffusion length from the surface is limited (Fromhold Jr., 1982). The same tendency was observed in a previous study (Suzuki et al, 2005).…”
Section: Plasma-irradiation Conditions For Chlorinationsupporting
confidence: 87%
“…The high field mechanism could be observed for the plasma oxidation of lead by Fromhold [37]. Therefore the resulting oxide thickness strongly depends on the plasma process parameters.…”
Section: Surface Modification By An Oxygen Plasmamentioning
confidence: 99%
“…Surface oxidation treatments including anodising and autoclaving, 9 thermal and plasma oxidation 10,11 and plasma electrolytic oxidation 12 have been researched to produce a protective oxide layer on zirconium alloys. However, the oxide film formed by anodising is too thin (,1 mm) to provide effective protection against mechanical damage whilst the thick oxide layer generated by plasma electrolytic oxidation is very rough and brittle.…”
Section: Introductionmentioning
confidence: 99%
“…However, the oxide film formed by anodising is too thin (,1 mm) to provide effective protection against mechanical damage whilst the thick oxide layer generated by plasma electrolytic oxidation is very rough and brittle. 10 Autoclaving can introduce a thick and dense oxide layer but it is a time consuming process and requires high pressures. 7 Plasma oxidation can increase the oxidation rate but of major concern is the detrimental effect of oxidation on the equipment used.…”
Section: Introductionmentioning
confidence: 99%