2010
DOI: 10.1134/s1064226910110112
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Plasma oscillations of the two-dimensional electron gas in the field-effect transistor with a cylindrical gate electrode

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Cited by 7 publications
(5 citation statements)
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“…To quantify the red shift of the plasmons, we can use a quasistatic approximation, 34 which is applicable when the wavelength of the light in the surrounding media is much larger than the wavelength of the plasmon. The plasmon dispersion in GNR becomes particularly simple:…”
Section: ■ Results and Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…To quantify the red shift of the plasmons, we can use a quasistatic approximation, 34 which is applicable when the wavelength of the light in the surrounding media is much larger than the wavelength of the plasmon. The plasmon dispersion in GNR becomes particularly simple:…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…To quantify the red shift of the plasmons, we can use a quasistatic approximation, which is applicable when the wavelength of the light in the surrounding media is much larger than the wavelength of the plasmon. The plasmon dispersion in GNR becomes particularly simple: where ω is the plasmon frequency, λ ω is the graphene conductivity, which depends on the doping level, Λ­( r ) is a dimensionless parameter, which depends on the geometry only, q = π/ W is a characteristic wavevector, and κ = (ε 0 + ε 1 )/2 is an average dielectric constant of the surrounding media, see Figure a.…”
Section: Resultsmentioning
confidence: 99%
“…We can average the force acting on the nanotubes over rapidly oscillating components: (13) The motion of the nanotubes in the detector will be considered in the model of concentrated parameters. In this model, the nanotubes are linear mechanical oscillators to which characteristic mass M and charac teristic stiffness K are juxtaposed (Fig.…”
Section: Averaged Ponderomotive Forcesmentioning
confidence: 99%
“…Subsequently, the resonant properties of the 2D electron gas were used for the development of the con cept of terahertz electromagnetic radiation detectors based on a field effect transistor with a movable gate [9][10][11][12][13]. In the general case, effective detection in such devices is based on the fact that the action of external amplitude modulation radiation leads to resonance of plasma oscillations in the channel.…”
Section: Introductionmentioning
confidence: 99%
“…Since FETs with a mechanically floating gate can exhibit not only mechanical resonances but also resonances at the frequency of plasma oscillations (associated with the electrons in the FET channel [10][11][12] ), the creation of detectors of modulated terahertz (THz) radiation is feasible. 7,9,[13][14][15] The operation of such detectors is associated with the resonant excitation of the plasma oscillations in the FET channel under the influence of the amplitude-modulated radiation (with the carrier frequency close or equal to the plasma frequency, i.e., the frequency in the THz range, and with the modulation frequency commensurable with the frequency of the floating gate mechanical oscillations). The detection mechanism is associated with the ponderomotive force proportional to the square of the voltage between the gate and the channel.…”
mentioning
confidence: 99%