Plasma-induced TCO texture of ZnO:Ga back contacts on silicon thin film solar cells

Lai, Kuang Chieh; Wang, Jen Hung; Lu, Chun-Shien; Tsai, Fu Ji; Yeh, Chih Hung; Houng, Mau Phon

doi:10.1016/j.solmat.2010.10.010

Cited by 27 publications

(4 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[1][2][3] Light scattering in silicon thin film solar cells can be achieved using wet-etching, to produce surface structures capable of scattering incident light into the silicon absorber layer. [4][5][6] For amorphous silicon solar cells, SnO 2 :F (Asahi U-Type) and AZO have been the most favored TCOs. 7 GZO has better conductivity and transparency in the near infrared region.…”

mentioning

confidence: 99%

Comparison of AZO, GZO, and AGZO Thin Films TCOs Applied for a-Si Solar Cells

Lin

Chen

Wang

et al. 2012

J. Electrochem. Soc.

View full text Add to dashboard Cite

This study prepared aluminum and gallium co-doped zinc oxide (AGZO) thin films using pulsed direct current magnetron sputtering, and studied the electrical properties, transmittance, effects of texturing, and applicability as the front contact for a-Si:H solar cells. Textured ZnO:Al (AZO) and ZnO:Ga (GZO) thin films were also compared with AGZO thin film to evaluate their performance as front contacts. Experimental results show that AGZO films with the highest figure of merit φ TC value (24.64 × 10 −3 −1) were obtained at Al and Ga doping concentrations of 0.54 wt% and 1.165 wt%, respectively. The textured AGZO films used as the front contact in a-Si:H solar cells achieved the following results: V OC = 0.77 V, J SC = 16.5 mA/cm 2 , FF = 59%, and conversion efficiency of 7.53%. AZO and GZO films have better electrical properties than AGZO film; however, AGZO film has superior transmittance in the near-infrared (NIR) region and higher J SC , conversion efficiency and external quantum efficiency (EQE) than AZO and GZO films under a similar haze value.

show abstract

mentioning

confidence: 99%

Comparison of AZO, GZO, and AGZO Thin Films TCOs Applied for a-Si Solar Cells

Lin

Chen

Wang

et al. 2012

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…Doping is a frequently employed technique for changing the characteristics of semiconductor materials, including carrier concentration, localized surface plasmon resonance (LSPR), electrochemical potential, and so on. 15–18 Prior studies to increase ZnO conductivity include substituting B, 19 Al, 20 Ga, 21 and In 22 for Zn and substituting F for O. Ga appears to be one of the best options when taking into account the stability, simplicity and cost. 23–25 n-Type doping may result in an LSPR effect, which could greatly enhance the photoelectric properties of semiconductor materials.…”

Section: Introductionmentioning

confidence: 99%

Broadband photoresponse in plasmon-enhanced Ga-doped ZnO

et al. 2023

View full text Add to dashboard Cite

show abstract

“…[3][4][5] Moreover, exhibiting high electrical and optical stability under hydrogen plasma, ZnO thin lms have been used as front electrodes in silicon thin-lm solar cells. [6][7][8] Al is the most widely studied dopant for ZnO lms. Fabricated Al-doped ZnO lms exhibit electric resistivity as low as 2-3 Â 10 À4 U cm and optical transmittance higher than 80% in the visible range.…”

Section: Introductionmentioning

confidence: 99%