“…Hirsch et al, 52 Altman et al, 53 and Jentschke et al 54 have monitored Si atom densities in front of C/C-SiC composites exposed to nitrogen-oxygen plasma flows, using high-resolution spectroscopy of Si I multiplet emissions in the 250-253-nm range. Herdrich et al 55 observed Si emission near 252 nm and 288 nm while testing SiC specimens in oxygen-nitrogen plasmas, and also captured emission from SiO 2 molecules near 423 nm.…”
Section: Gas Emission Spectroscopymentioning
confidence: 98%
“…This suggests that FTIR emission spectroscopy might be used as an in situ monitor for changing surface compositions during high-enthalpy testing. Measurements of this type were made by Hirsch et al 52 for characterizing the oxidation behavior of carbon/carbon and carbon/silicon carbide composites in the ICP wind tunnels. However, this concept has never been explored as an in situ diagnostic for UHTC materials systems.…”
“…Hirsch et al, 52 Altman et al, 53 and Jentschke et al 54 have monitored Si atom densities in front of C/C-SiC composites exposed to nitrogen-oxygen plasma flows, using high-resolution spectroscopy of Si I multiplet emissions in the 250-253-nm range. Herdrich et al 55 observed Si emission near 252 nm and 288 nm while testing SiC specimens in oxygen-nitrogen plasmas, and also captured emission from SiO 2 molecules near 423 nm.…”
Section: Gas Emission Spectroscopymentioning
confidence: 98%
“…This suggests that FTIR emission spectroscopy might be used as an in situ monitor for changing surface compositions during high-enthalpy testing. Measurements of this type were made by Hirsch et al 52 for characterizing the oxidation behavior of carbon/carbon and carbon/silicon carbide composites in the ICP wind tunnels. However, this concept has never been explored as an in situ diagnostic for UHTC materials systems.…”
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