Plasma etching in magnetic multipole microwave discharge

Arnal, Y.; Pelletier, Jacques; Pomot, C.; Petit, Barbara; Durandet, A.

doi:10.1063/1.95143

Cited by 37 publications

(8 citation statements)

References 4 publications

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“…J s shows a tendency to decrease for pressures greater than 3 mTorr. Similar behaviours have been observed with SF 6 [11][12][13], NF 3 [14] and CF 4 [15] in microwave discharges and with CF 4 [16] and SiH 4 [17] in continuous discharges. In an Ar discharge, J s increases with the pressure [18].…”

Section: Discharge Studysupporting

confidence: 84%

“…In addition to this parameter interdependence, the performance of this reactor is degraded at low pressures for which we have very low etch rates and a high ion bombardment energy. To avoid these problems, reactors and structures have been developed such as the magnetically enhanced triode reactor [1], the magnetron [2], the microwave electron cyclotron resonance reactor (ECR) [3,4], the rf double cathode [5], the hollow cathode [6] and the rf helical resonator structure [7]. The best conditions would be to work simultaneously with a high ion flux to obtain a high etch rate and a low ion bombardment energy to avoid wafer damage and contaminations but high enough to obtain good anisotropy.…”

Section: Introductionmentioning

confidence: 99%

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Radio frequency synchronized triode reactor with a multihole cathode for etching of Si

Djahièche‐Nencib¹,

Kessi²,

Tadjine³

1996

J. Phys. D: Appl. Phys.

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A magnetically enhanced radio frequency (13.56 MHz) synchronized triode reactor with a multihole cathode used for etching of Si by a plasma is described. The ion energy is controlled independently of the plasma creation function by adjusting the phase difference between the two rf signals. The cathode shape allows a decreasing of the self-bias potential and an increasing of the ion current density when the plasma is created in the holes. We have studied the effects of ion energy and incident power on etch rate, contaminations and morphology of Si samples. The effects of the magnetic confinement and the electrode shape on the etch rate are also presented. Relative to a standard plate electrode, the etch rate is enhanced by a factor of about three at a pressure of 10 mTorr and a power of 500 W.

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Section: Discharge Studysupporting

confidence: 84%

Section: Introductionmentioning

confidence: 99%

Radio frequency synchronized triode reactor with a multihole cathode for etching of Si

Djahièche‐Nencib¹,

Kessi²,

Tadjine³

1996

J. Phys. D: Appl. Phys.

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“…Or [Mechanism for the etching of silicon by fluorine atoms (from Donnelly and Flamm [5] [11,12]. Le [20,22].…”

mentioning

confidence: 99%

Mécanismes d'anisotropie dans la gravure du silicium en plasma SF6. Modèle de gravure

Petit¹,

Pelletier²

1986

Rev. Phys. Appl. (Paris)

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HAL is a multi-disciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. Abstract -The mechanisms responsible for etching of silicon in low pressure SF6 plasma under low energy ion impact are studied using Microwave Multipolar Plasmas. Experimental results using both mass spectrometric and etch profile analysis show the evolution of anisotropy and etch rate as a function of pressure. In particular, a transition to perfect anisotropy is observed below a threshold pressure. To account for these experimental results, a new interpretation is proposed for the surface processes observed in plasma etching. To make the current models consistent, it is necessary to add three following assumptions : i) large lateral repulsive interactions between chemisorbed fluorine atoms in nearest neighbour positions ; ii) chemisorbed fluorine atom diffusion on the silicon surface ; iii) multilayer adsorption for the Si/F system. The analytical treatment of the model points out that the etch rate is limited by the partial pressure of atomic fluorine, and that the anisotropy is controlled by the ion current density.

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“…It is based on a multipolar plasma source [4], whose reactive chamber is filled with different gases: H 2 (or D 2 ) to favour chemical etching of a target by H (or D) atoms [5], and Ar whose ions are used to sputter more efficiently the target than hydrogen ions (H + , H þ 2 , H þ 3 ), due to higher mass [6]. A permanent magnet cage ensures plasma confinement around a substrate holder located in the centre of the vacuum chamber.…”

Section: The Casimir Reactormentioning

confidence: 99%

Introduction of a new experimental device for simulating parasitic plasmas such as those expected under the divertor dome

Lombardi

Bénédic

Hassouni

et al. 2009

Journal of Nuclear Materials

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Plasma etching in magnetic multipole microwave discharge

Abstract: A plasma etching reactor is described which associates surface magnetic confinement, microwave discharge, and independently controlled substrate biasing. Preliminary measurements show that the reactor produces reactive plasmas allowing anisotropic fine line etching at low ion energy.

Cited by 37 publications

References 4 publications

Radio frequency synchronized triode reactor with a multihole cathode for etching of Si

Radio frequency synchronized triode reactor with a multihole cathode for etching of Si

Mécanismes d'anisotropie dans la gravure du silicium en plasma SF6. Modèle de gravure

Introduction of a new experimental device for simulating parasitic plasmas such as those expected under the divertor dome

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