Plasma-enhanced low temperature growth of silicon nanowires and hierarchical structures by using tin and indium catalysts

Yu, Linwei; O’Donnell, Benedict; Alet, Pierre-Jean; Conesa‐Boj, Sonia; Peiró, Francesca; Arbiol, Jordi; Cabarrocas, Pere Roca i

doi:10.1088/0957-4484/20/22/225604

Cited by 122 publications

(96 citation statements)

References 22 publications

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“…The reported metal catalysts include Ga, Ni, In-Ni alloy, Pt, Au, Ge, and Sn. [215][216][217][218][219][220][221] The metal-catalyzed transformation of solid silicon was the preferred approach, compared to silane-based CVD, [222][223][224] because the solid silicon precursor is more accessible and easier to manipulate in comparison to silane. However, due to the high affinity between silicon and oxygen, silica nanowires are often predominately obtained in this method even though other reactive gases were present.…”

Section: Silicon-based Nanowires Prepared By Plasma Treatment Of Solimentioning

confidence: 99%

Plasma‐Assisted Approaches in Inorganic Nanostructure Fabrication

et al. 2010

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Plasma is a unique medium for chemical reactions and materials preparations, which also finds its application in the current tide of nanostructure fabrication. Although plasma-assisted approaches have been long used in thin-film deposition and the top-down scheme of micro-/nanofabrication, fabrication of zero- and one-dimensional inorganic nanostructures through the bottom-up scheme is a relatively new focus of plasma application. In this article, recent plasma-assisted techniques in inorganic zero- and one-dimensional nanostructure fabrication are reviewed, which includes four categories of plasma-assisted approaches: plasma-enhanced chemical vapor deposition, thermal plasma sintering with liquid/solid feeding, thermal plasma evaporation and condensation, and plasma treatment of solids. The special effects and the advantages of plasmas on nanostructure fabrication are illustrated with examples, emphasizing on the understandings and ideas for controlling the growth, structure, and properties during plasma-assisted fabrications. This Review provides insight into the utilization of the special properties of plasmas in nanostructure fabrication.

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Section: Silicon-based Nanowires Prepared By Plasma Treatment Of Solimentioning

confidence: 99%

Plasma‐Assisted Approaches in Inorganic Nanostructure Fabrication

et al. 2010

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“…This growth process is explained with the aid of diffusion-limited aggregation caused by the fractal dendritic pattern. [20] However, the growth of SiNW is observed by a standard VLS growth with a catalyst on the top during the growth process and the same catalyst precipitates silica NWs with a catalyst at the bottom during the cooling step of the growth process. Yet, the described growth process is not similar to the growth observed here with a catalyst on the top of the core-shell NWs.…”

Section: Growth Mechanismmentioning

confidence: 99%

“…[21,22] The bond lengths of Si-Si and Si-O are 230 p.m. and 153.3 p.m., respectively, while their bond energy is 226 and 465 kJ/mol, respectively. [20,23,24] Si-O is more stable bond considering the shorter bond length with higher bond energy compared with Si-Si. Hence, the precipitated NW will have more Si-O bonds that form a thick shell of SiO x compared with the Si core.…”

Section: Growth Mechanismmentioning

confidence: 99%

Birth of silicon nanowires covered with protective insulating blanket

Manjunatha

2017

MRS Communications

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Core-shell silicon-silicon oxide nanowires are synthesized at low temperatures using inorganic and organic compounds of a tin as a catalyst. In situ simultaneous one-dimensional growth of pristine silicon nanowires (SiNWs) using alloy catalyst is reported here. Such a development process generates a high-quality SiNW that is not determined by other atomic species in the plasma. A possible growth model is discussed to understand the synchronized precipitation of a SiNW core and an oxide shell. Nanowires grown here eliminate the additional fabrication steps to deposit anticipated oxide shell that is achieved by precipitation from the same catalyst that precipitates core nanowires.

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“…Using the PECVD to prepare an amorphous layer over the wire, which led to a reduction in the crystallinity of the as-grown SiNWs [30][31][32]. Another reason for the weak crystallinity is that the wires were grown with a polycrystalline structure and the strength of the diffraction peaks in the XRD pattern is dependent on the particle size and the larger particles dominate [33].…”

Section: Crystalline Structurementioning

confidence: 99%

Growth and characterization of silicon nanowires catalyzed by Zn metal via Pulsed Plasma-Enhanced Chemical Vapor Deposition

Al-Taay

Mahdi

Parlevliet

et al. 2014

Superlattices and Microstructures

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This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. 1 Growth and Characterization of Silicon Nanowires Catalyzed by Zn Metal Via Pulsed Plasma-Enhanced Chemical Vapor Deposition AbstractHigh-density silicon nanowires (SiNWs) were grown via Pulsed Plasma-EnhancedChemical Vapor Deposition at 400°C. Zinc (Zn) metal thin films with varying thickness from 10nm to 100nm were used as a catalyst to synthesize the SiNWs. The surface morphology, crystalline structure, and optical properties of the grown SiNWs were investigated. Results indicated that increasing the Zn thickness from 10nm to 100nm led to an increase in wire diameter from 65nm to 205nm, resulting in a reduction of SiNW density. The wires grown with Zn thicknesses of 10 and 80nm exhibited high crystallinity as shown by the X-ray diffraction patterns. Three emission bands (green, blue, and red) were observed in the photoluminescence spectra of the SiNWs prepared using various Zn catalyst thicknesses. The SiNWs prepared using 10 and 80nm Zn thicknesses displayed a sharp Raman peak that corresponded to the first-order 2 transverse optical phonon mode in contrast to the other samples that produced SiNWs with a broad Raman band.

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Plasma-enhanced low temperature growth of silicon nanowires and hierarchical structures by using tin and indium catalysts

Cited by 122 publications

References 22 publications

Plasma‐Assisted Approaches in Inorganic Nanostructure Fabrication

Plasma‐Assisted Approaches in Inorganic Nanostructure Fabrication

Birth of silicon nanowires covered with protective insulating blanket

Growth and characterization of silicon nanowires catalyzed by Zn metal via Pulsed Plasma-Enhanced Chemical Vapor Deposition

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