1995
DOI: 10.1016/0257-8972(95)08294-8
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Plasma-enhanced CVD of electrochromic materials

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Cited by 29 publications
(15 citation statements)
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“…The reaction of this precursor with molecular oxygen at 300°C was proven to yield single phase V 2 O 5 . This crystalline phase was also observed as a dominant structure using PECVD at 207–72°C starting from VO(O i Pr) 3 under oxygen‐rich conditions …”
Section: Cvd Of Vanadium Oxidementioning
confidence: 92%
“…The reaction of this precursor with molecular oxygen at 300°C was proven to yield single phase V 2 O 5 . This crystalline phase was also observed as a dominant structure using PECVD at 207–72°C starting from VO(O i Pr) 3 under oxygen‐rich conditions …”
Section: Cvd Of Vanadium Oxidementioning
confidence: 92%
“…Physical vapor deposition (PVD) techniques such as evaporation and sputtering are commonly employed for tungsten oxide film deposition. In comparison, PECVD has received relatively little attention for synthesis of tungsten oxide films [13][14][15][16][17]. Garg et al [18] reported that the advantages of PECVD over sputtering include higher deposition rates.…”
Section: Introductionmentioning
confidence: 97%
“…Nickel oxide/hydroxide films can be commonly prepared by physical methods such as sputtering [9], vacuum evaporation [10] and electron beam deposition [11], or by chemical methods such as CVD [12], sol-gel deposition [13] and electrochemical deposition [14,15]. Nickel oxide/hydroxide films prepared by physical methods usually require expensive equipments and have the disadvantage of high energy consumption.…”
Section: Introductionmentioning
confidence: 99%