Abstract:Thermal chemical vapor deposition (T-CVD) is currently the process of choice to grow large area graphene with good quality on metal surfaces like copper (Cu) or nickel (Ni) due to their catalytic properties. However the typical growth temperatures are still around 1000°C, and the process cannot be easily adapted to alternative, i.e. non-metallic, substrates.
Regarding these issues we used a commercially available 4” Aixtron Black Magic system for establishing a plasma enhanced CVD process (PE-C… Show more
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