2000
DOI: 10.1016/s0167-577x(00)00143-9
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Plasma-enhanced chemical vapor deposition of PbTiO3 thin films

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Cited by 12 publications
(8 citation statements)
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“…In the literature, mainly liquid PbEt 4 and Ti(O i Pr) 4 compounds were used as precursors for MOCVD growth of PTO films by bubbling of carrier gas through containers of liquid precursors [5,6,[12][13][14][15][16]. However, some other pairs of Pb and Ti precursors have been also studied: Pb(thd) 2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate) and Ti(O i Pr) 4 [17][18][19][20], (C 2 H 5 ) 3 PbOCH 2 C(CH 3 ) 3 and Ti(O i Pr) 4 [21], Pb(OAc) 2 and Ti(OnBu) 4 [22], PbEt 4 and Ti-npropoxyde [23] or PbEt 4 and TiCl 4 [24]. Only several works [25,26] can be found on the use of solid Pb(thd) 2 and Ti(O i Pr) 2 (thd) 2 or TiO(thd) 2 precursors for PTO depositions.…”
Section: Introductionmentioning
confidence: 99%
“…In the literature, mainly liquid PbEt 4 and Ti(O i Pr) 4 compounds were used as precursors for MOCVD growth of PTO films by bubbling of carrier gas through containers of liquid precursors [5,6,[12][13][14][15][16]. However, some other pairs of Pb and Ti precursors have been also studied: Pb(thd) 2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate) and Ti(O i Pr) 4 [17][18][19][20], (C 2 H 5 ) 3 PbOCH 2 C(CH 3 ) 3 and Ti(O i Pr) 4 [21], Pb(OAc) 2 and Ti(OnBu) 4 [22], PbEt 4 and Ti-npropoxyde [23] or PbEt 4 and TiCl 4 [24]. Only several works [25,26] can be found on the use of solid Pb(thd) 2 and Ti(O i Pr) 2 (thd) 2 or TiO(thd) 2 precursors for PTO depositions.…”
Section: Introductionmentioning
confidence: 99%
“…After suitable doping, PbTiO 3 is a good candidate for high frequency ultrasonic transducer applications [1]. PbTiO 3 is one of the most interesting ferroelectric perovskites for nonlinear optical applications too [2][3][4]. However, it is less studied than isomorphous BaTiO 3 because of difficulties in growing single crystals of good optical quality and high resistivity.…”
Section: Introductionmentioning
confidence: 99%
“…Ferroelectric thin films have attracted major attention in recent years because of their applications in integrated ferroelectric devices such as nonvolatile memories, ultrasonic sensors, and infrared detectors. , In the past decade, research on ferroelectric thin films has particularly been focused on PbTiO 3 , BaTiO 3 , lead zironate titanate (PZT), and BaSrTi 1– x O 3 . , Lead-based ferroelectric thin films have been used lately in the electronic industry due to the fact that they can be easily integrated into electronic or optoelectronic devices such as piezoelectric transductors and high-sensibility pyroelectric sensors. Lead titanate (PbTiO 3 ) is not the exception, with a perovskite type structure and singular properties such as spontaneous polarization, high Curie temperature (490 °C), large tetragonality, relatively low permittivity, and large pyroelectric coefficient. , Several methods, physical and chemical, are used to deposit ferroelectric PbTiO 3 thin films including the sol–gel and hydrothermal methods, radio-frequency magnetron sputtering, pulsed laser ablation, and chemical vapor deposition (CVD). , …”
Section: Introductionmentioning
confidence: 99%