Plasma enhanced chemical vapor deposition silicon oxynitride optimized for application in integrated optics

Wörhoff, Kerstin; Driessen, A.; Lambeck, Paul; Hilderink, L.T.H.; Linders, Petrus W.C.; Popma, T.J.A.

doi:10.1016/s0924-4247(98)00325-2

Cited by 114 publications

(73 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…stands for a layer index or one of the geometrical parameters. In Table I, the maximum deviations in these parameters are given, using the technologies available in our laboratory [16]. If the deviations are relative, as in the case of the geometrical parameters, the absolute deviations for the final structure are given inbetween brackets.…”

Section: Structure and Designmentioning

confidence: 99%

“…The substrate layer is grown by thermal oxidation of the silicon wafer, the core layer deposited using low-pressure chemical vapor deposition (LPCVD) and the cladding layer deposited using plasma-enhanced chemical vapor deposition (PECVD) applying the processes as developed in our laboratory [16]. The 1-nm-high ridge was defined using BHF etching (0.55 nm/min), the 15-nm-deep etch step by reactive ion etching (RIE).…”

Section: Fabricationmentioning

confidence: 99%

See 1 more Smart Citation

Passive polarization converter in SiON technology

Koster

Lambeck

2001

J. Lightwave Technol.

Self Cite

View full text Add to dashboard Cite

Abstract-A passive polarization converter has been realized in silicon oxynitride (SiON) technology. The device is a grating assisted codirectional coupler consisting of segments of asymmetrically etched ridge waveguides. By using a double-masking technique, the fabrication of the device is tolerant with respect to the alignment of the required masks. Conversion efficiencies up to 0.98 (TE TM and TM TE) and insertion losses of 3 dB/cm have been measured. Using 2-D beam propagation method simulations, an observed beat pattern in the converter could be explained as due to a leaky mode, which is captured in the grating structure.

show abstract

Section: Structure and Designmentioning

confidence: 99%

Section: Fabricationmentioning

confidence: 99%

Passive polarization converter in SiON technology

Koster

Lambeck

2001

J. Lightwave Technol.

Self Cite

View full text Add to dashboard Cite

show abstract

“…In silicon nitride (SiN) compounds, like silicon oxynitride and silicon rich nitride, the refractive index can be tuned over a wide range, potentially from 1.45 to about 2, yet at the expense of higher losses [1,2]. Silicon oxycarbide (SiOC) is a versatile material that has been used in a variety of applications including Li-ion batteries [3], photoluminescence [4], electroluminescence [5], and low-k interlayer dielectric [6,7].…”

Section: Introductionmentioning

confidence: 99%

Waveguiding Light into Silicon Oxycarbide

2017

View full text Add to dashboard Cite

Featured Application: Silicon oxycarbide is demonstrated to be a potential photonic platform for integrated optics applications. Abstract:In this work, we demonstrate the fabrication of single mode optical waveguides in silicon oxycarbide (SiOC) with a high refractive index n = 1.578 on silica (SiO 2 ), exhibiting an index contrast of ∆n = 8.2%. Silicon oxycarbide layers were deposited by reactive RF magnetron sputtering of a SiC target in a controlled process of argon and oxygen gases. The optical properties of SiOC film were measured with spectroscopic ellipsometry in the near-infrared range and the acquired refractive indices of the film exhibit anisotropy on the order of 10 −2 . The structure of the SiOC films is investigated with atomic force microscopy (AFM) and scanning electron microscopy (SEM). The channel waveguides in SiOC are buried in SiO 2 (n = 1.444) and defined with UV photolithography and reactive ion etching techniques. Propagation losses of about 4 dB/cm for both TE and TM polarizations at telecommunication wavelength 1550 nm are estimated with cut-back technique. Results indicate the potential of silicon oxycarbide for guided wave applications.

show abstract

“…The systems of integrated optics can be produced with the application of: ion exchange in glass [1,2], chemical vapor deposition (CVD) [3] or sol-gel technology [4][5][6][7][8][9][10][11]. The sol-gel technology has a big advantage as compared to others since it does not require expensive technological equipment and it can provide various dielectric materials of controlled structures for optoelectronics.…”

Section: Introductionmentioning

confidence: 99%

Single-Mode Rib Waveguides Fabricated by Means of Sol-Gel Method

2010

View full text Add to dashboard Cite

Rib waveguides were fabricated with the use of selective, wet chemical etching of two-component waveguide films SiO2:TiO2 which were obtained using sol-gel method. Photoresist was applied as a mask in the process. The etching of the films SiO2:TiO2 was carried out in water solution of ammonia fluoride. The paper presents the results of theoretical analysis as well as the power distributions in the fabricated strip waveguides.

show abstract

Plasma enhanced chemical vapor deposition silicon oxynitride optimized for application in integrated optics

Cited by 114 publications

References 7 publications

Passive polarization converter in SiON technology

Passive polarization converter in SiON technology

Waveguiding Light into Silicon Oxycarbide

Single-Mode Rib Waveguides Fabricated by Means of Sol-Gel Method

Contact Info

Product

Resources

About