Plasma energy transport to an electrically biased surface

The effects of plasma characteristics on the melting time at the front surface of a film on a substrate: An exact solution

“…Table 2 Values of the referenced dimensionless parameters reduces in the forward direction from 1.62 to 1.48 (the temperature difference is about 42 K), but rapidly drops in the substrate. Except for ion-to-electron mass ratio, increasing of reflectivities of electrons and ions, charge number, and electron-to-ion source temperature ratio at the presheath edge result in decreasing of incident energy of plasma [4] and reducing the temperature profile in the film and substrate. The effects of dimensionless bias voltage, plasma flow work-to-heat conduction ratio, solid thermal conductivity ratio of substrate-tofilm and specific heat ratio of film-to-substrate on the temperature profiles in the film and substrate at the s = 7 are shown in Fig.…”

“…Increasing of the bias voltage, the slope of total plasma energy flux versus bias voltage changes from negative to positive value [4]. The total plasma energy flux exhibits a minimum.…”

“…Conduction is removed by convection at the bottom surface of the finite film with heat transfer coefficient h 1 . The major assumptions made are as follows [4,16,17]: 1. The model is one-dimensional due to a thin thickness of the region considered.…”

“…Over the past decades there has been intensive research to study energy transport encountered in the cathode or near wall region of electric arc discharges, lamps, fusion devices, edge plasmas, ion implantation, deposition, etching, etc. [3][4][5][6][7][8][9][10][11]. Predictions of melting time, heating rate at the front surface and temperature distributions in a workpiece in contact with the plasma as functions of plasma characteristics and thermal properties of workpieces are still incomplete [12][13][14][15][16].…”

“…The film experiences heating induced by energy flux coming from the bulk plasma through the presheath and sheath to the surface, based on the analysis from a previous work [4]. In this study, a one-dimensional unsteady heat conduction model is developed to systematically predict unsteady temperature distributions in the film and substrate, and calculate the melting time and heating rate of the front surface of the film on the substrate subject to a negative bias voltage.…”