Plasma edge and its application to infrared measurement and detection

Dingrong, Qian

doi:10.1063/1.354622

Cited by 1 publication

(2 citation statements)

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“…(a) (b) FTIR measurements were used to determine the carrier concentration in the GaN:O film. The infrared reflectance spectrum of a n-type semiconductor is described by the Lorentzian oscillator model [30,31]. In this model, the dielectric function and the complex refractive index allow us to obtain the plasma frequency vp and then the free electron concentration N:…”

Section: Resultsmentioning

confidence: 99%

“…FTIR measurements were used to determine the carrier concentration in the GaN:O film. The infrared reflectance spectrum of a n-type semiconductor is described by the Lorentzian oscillator model [ 30 , 31 ]. In this model, the dielectric function and the complex refractive index allow us to obtain the plasma frequency v p and then the free electron concentration N :

where v p is the plasma frequency (plasma edge), K is the const = 1.115 × 10 15 m −1 , m* is the electron effective mass in GaN (0.22) and

is the high frequency dielectric constant (5.5).…”

Section: Resultsmentioning

confidence: 99%

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Ohmic Contact to n-GaN Using RT-Sputtered GaN:O

et al. 2023

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One of the key issues in GaN-based devices is the resistivity and technology of ohmic contacts to n-type GaN. This work presents, for the first time, effective intentional oxygen doping of sputtered GaN films to obtain highly conductive n+-GaN:O films. We have developed a novel and simple method to obtain these films. The method is based on the room temperature magnetron sputtering of a single crystal bulk GaN target doped with oxygen. The n+-GaN:O films exhibit a polycrystalline structure with a crack-free surface and a free electron concentration of 7.4 × 1018 cm3. Ohmic contact to GaN:Si with n+-GaN:O sub-contact layer achieves specific contact resistance of the order of 10−5 Ωcm2 after thermal treatment. The obtained results are very promising for the development of the technology of a whole new class of ohmic contacts to n-GaN.

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Section: Resultsmentioning

confidence: 99%

where v p is the plasma frequency (plasma edge), K is the const = 1.115 × 10 15 m −1 , m* is the electron effective mass in GaN (0.22) and

is the high frequency dielectric constant (5.5).…”

Section: Resultsmentioning

confidence: 99%