2015
DOI: 10.1016/j.cpme.2015.01.001
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Plasma deposited silicon oxide films for controlled permeation of copper as antimicrobial agent

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Cited by 3 publications
(6 citation statements)
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“…Besides the displacement, there is a trend to gradually vanishment of this contribution as P is increased beyond 200 W, corroborating the idea of depletion of methyl groups and transformation of the organosilicon layer into silica. The same intensity reduction is observed in the band around 790 cm -1 with increasing P once this absorption may have the contribution of organic [Si-(CH 3 ) 2 ] 33 and inorganic (Si-O-Si) 54,58,67 groups.…”
Section: Chemical Structuresupporting
confidence: 65%
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“…Besides the displacement, there is a trend to gradually vanishment of this contribution as P is increased beyond 200 W, corroborating the idea of depletion of methyl groups and transformation of the organosilicon layer into silica. The same intensity reduction is observed in the band around 790 cm -1 with increasing P once this absorption may have the contribution of organic [Si-(CH 3 ) 2 ] 33 and inorganic (Si-O-Si) 54,58,67 groups.…”
Section: Chemical Structuresupporting
confidence: 65%
“…Studies in the literature 58,67,73,78,79 show that the content of SiO 4 groups affects the volumetric density of the material due to porosity creation 80 . Furthermore, samples with higher densities of tetrahedral oxide showed greater contribution of the band related to Si-OH (Figure 2a).…”
Section: Chemical Structurementioning
confidence: 99%
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“…31 The plasma-jet system employed for thin film deposition has been originally developed for atmospheric pressure plasma etching, where very high spatiotemporal stability of the plasma discharge is required. [32][33][34] High frequency power is used to ignite and sustain the plasma.…”
Section: Polymer Resist-related Ion Beam Techniquesmentioning
confidence: 99%