Plasma-deposited silicon nitride films with low hydrogen content for amorphous silicon thin-film transistors application

Campmany, J.; Andújar, J.L.; Canillas, A.; Cifré, J.; Bertrán, E.

doi:10.1016/0924-4247(93)80056-m

Cited by 10 publications

(8 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Section: Silicon Nitridementioning

confidence: 98%

“…The H content is drastically dependent on deposition temperature (figure 3 [4]), gas composition, and stoichiometry [3]. Campmany et al [3] reported that for the SiH 4 -NH 3 reaction the total H content increases drastically for N-Si ratios above 0.7 and that the H atom is bonded mostly to nitrogen in the composition range above 0.7. This is not the case when NH 3 is replaced by N 2 [3,4].…”

Section: Silicon Nitridementioning

confidence: 99%

“…For PECVD nitrides the hydrogen content can reach 40 at.% while in LPCVD nitrides concentrations as small as 3% are observed [4,6,5,3]. The H content is drastically dependent on deposition temperature (figure 3 [4]), gas composition, and stoichiometry [3]. Campmany et al [3] reported that for the SiH 4 -NH 3 reaction the total H content increases drastically for N-Si ratios above 0.7 and that the H atom is bonded mostly to nitrogen in the composition range above 0.7.…”

Section: Silicon Nitridementioning

confidence: 99%

See 2 more Smart Citations

LPCVD against PECVD for micromechanical applications

Stoffel

Kovács

Kronast

et al. 1996

J. Micromech. Microeng.

130

View full text Add to dashboard Cite

After discussion of the basic aspects of CVD and its reaction kinetics LPCVD and PECVD will evolve as techniques commonly used at high temperature and lower temperature , respectively. Films deposited by these two techniques differ in several aspects, i.e., thickness, uniformity, purity, density, electrical properties, adhesion, step coverage, etc. Reactor designs are discussed in brief for optimization of the process parameters to yield optimized film properties. Then each of the major film materials such as polysilicon, SiN, , , SiC and some exotics such as diamond films are discussed with respect to their application in microstructures and their film properties in dependence on the deposition technique and follow-on processing, e.g., internal stresses due to imperfection in structure and composition or clamping, film density, pinhole density, and etchability. The discussion then moves to the application of LPCVD and PECVD in microstructures. A few typical examples will be presented for functional layers: films for membranes, cantilevers, etc in mono- and heterostructures, or ion sensitive films including passivation films as used in many sensors (e.g., microphones) and actuators (e.g., micromotors), especially such as fabricated by surface micromachining. Some room is also given to SiC, a new micromechanical material. A summary and weighting of the two CVD techniques is given.

show abstract

Section: Silicon Nitridementioning

confidence: 98%

Section: Silicon Nitridementioning

confidence: 99%

Section: Silicon Nitridementioning

confidence: 99%

See 1 more Smart Citation

LPCVD against PECVD for micromechanical applications

Stoffel

Kovács

Kronast

et al. 1996

J. Micromech. Microeng.

130

View full text Add to dashboard Cite

show abstract

“…The use of N 2 as a reactant gas instead of NH 3 helps to increase the plasma density and reduces the amount of hydrogen in PECVD silicon nitride. 32,33 The hydrogen content of nitride films deposited at 250-350°C is three times lower than that deposited with ammonia under similar conditions. Increased ion bombardment, obtained by using diluted inert gas, can also help to reduce hydrogen incorporation and to control film stress.…”

Section: B Plasma and Deposition Chemistrymentioning

confidence: 98%

Growth front roughening in silicon nitride films by plasma-enhanced chemical vapor deposition

et al. 2002

View full text Add to dashboard Cite

The dynamic roughening of amorphous silicon nitride growth front prepared by a plasma-enhanced chemical vapor deposition is presented. Morphology of the films grown at different substrate temperatures ͑from 50 to 350°C͒ for various lengths of deposition time was measured ex situ using atomic force microscopy. The dynamic scaling exponents are measured as ␣ϳ0.77, ␤ϳ0.40, and 1/zϳ0.28, and do not change significantly under the investigated substrate temperature range. An attempt has been made to describe the plasma growth process using a multiparticle reemission model where the incident flux distribution, sticking coefficient, shadowing, surface diffusion, and desorption mechanisms all contributed to the growing morphology.

show abstract

“…It was reported that for the SiH4-NH3 reaction, the total H content increases drastically for N-Si ratios above 0.7 and that the H atom is mainly bonded to N in the composition range above 0.7. [52] This is not the case when N2 replaces NH3. The result is then a substantially reduced total H content.…”

Section: Silicon Nitridementioning

confidence: 99%

A Comprehensive Review on Thin Film Depositions on Pecvd Reactors

Iliescu¹

2021

AnnalsARSciInfo

View full text Add to dashboard Cite

The deposition of thin films by Plasma Enhanced Chemical Vapor Deposition (PECVD) method is a critical process in the fabrication of MEMS or semiconductor devices. The current paper presents an comprehensive overview of PECVD process. After a short description of the PECVD reactors main layers and their application such as silicon oxide, TEOS, silicon nitride, silicon oxynitride, silicon carbide, amorphous silicon, diamond like carbon are presented. The influence of the process parameters such as: chamber pressure, substrate temperature, mass flow rate, RF Power and RF Power mode on deposition rate, film thickness uniformity, refractive index uniformity and film stress were analysed. The main challenge of thin films PECVD deposition for Microelectromechanical Systems (MEMS)and semiconductor devices is to optimize the deposition parameters for high deposition rate with low film stress which and if is possible at low deposition temperature.

show abstract

Plasma-deposited silicon nitride films with low hydrogen content for amorphous silicon thin-film transistors application

Cited by 10 publications

References 7 publications

LPCVD against PECVD for micromechanical applications

LPCVD against PECVD for micromechanical applications

Growth front roughening in silicon nitride films by plasma-enhanced chemical vapor deposition

A Comprehensive Review on Thin Film Depositions on Pecvd Reactors

Contact Info

Product

Resources

About