Plasma characterization of a high-pressure d(-Sputtering system used for the “in situ” preparation of high-Tc superconducting thin films

Giratá, D.; Rojas, Yurani Fernanda Cruz; Bacca, E.; Chacón, M.; Lopera, W.; Heiras, J.

doi:10.1016/0038-1098(94)90116-3

Cited by 12 publications

(6 citation statements)

References 7 publications

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“…The c-axis lattice parameter and the crystalline orientation of the film, perpendicular to the substrate plane, were determined by a θ/2θ scan. Such behavior of the oxygen and lead concentrations has been previously observed [6][7][8]. The film orientation in the substrate plane and its mosaic spread was investigated recording a φ-scan of the substrate and thin film 202 reflections.…”

Section: Structural and Compositional Propertiessupporting

confidence: 56%

High Pressure Deposition of Epitaxial PZT Thin Films on Sr(Nb)TiO₃

et al. 2003

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Epitaxial thin ferroelectric films of Pb(Zr 0.53 Ti 0.47 ) (PZT) were successfully grown on Sr(Nb)TiO 3 (SNTO) single crystal substrates by high-pressure rf sputtering. Pure O 2 was used as working gas at a pressure above 1 Torr. Deposition temperature was varied from 550°C to 600°C. Under these conditions we were able to deposit films at a rate of 2.7 Å/min. Their crystalline properties, evaluated by θ/2θ, ω and φ scans, showed both in-plane and out of plane orientation. Film composition and film-substrate interface characteristics were studied by Rutherford Backscattering Spectroscopy (RBS). For RBS data the composition ratios for the films were calculated having obtained the expected values for a stoichiometric composition. A very thin diffusion layer of Pb at the film-substrate interface was also introduced. However, the deficiency in Pb, which is correlated to the presence of oxygen vacancies, is lower in our films produced at high O 2 pressure than those reported for films produced by sputtering at lower pressures. The ferroelectric hysteresis loops measured in the Pt/PZT/SNTO heterostructures show good ferroelectric behavior with remanent polarizations of 12µCcm -2 and coercive field of 50kVcm -1 at 5V. The high-pressured technique representing a useful and capable method capable of obtaining in situ epitaxial, fully oxygenated, pyrochlore-free ferroelectric thin film with high quality structural, compositional and dielectric properties, without post deposit treatment.

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Section: Structural and Compositional Propertiessupporting

confidence: 56%

High Pressure Deposition of Epitaxial PZT Thin Films on Sr(Nb)TiO₃

et al. 2003

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“…More details on the deposition method can be found in Ref. [8]. X-ray diffraction (XRD) was carried out on a Philips PW1710 diffractometer with copper target.…”

Section: Methodsmentioning

confidence: 99%

Magneto-optical Kerr effect in NiZn ferrite films of variable thickness

Calle

Cuellar

et al. 2006

Physica B: Condensed Matter

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“…We have prepared in-situ HoBa 2 Cu 3 O 7-δ thin films by a high-pressure dc-sputtering technique in an atmosphere of pure oxygen, deposited on SrTiO 3 (100) single crystal [8]. The X-ray diffraction spectra indicated that the c = 11.67(7) Å crystallographic parameter are oriented normal to the surface of the substrate.…”

Section: Methodsmentioning

confidence: 99%

Phase‐glass scaling near the coherence transition in granular HoBa₂Cu₃O_7–δ superconducting thin films

Roa-Rojas

Téllez

2005

Physica Status Solidi (b)

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Systematic measurements of electrical magnetoconductivity near the coherence transition of granular HoBa 2 Cu 3 O 7 -δ thin films are reported. Experiments performed in magnetic fields ranging from 0 to 2500 Oe reveal that close to the coherence transition temperature T c0 (H), the correlation length scales as a power law of temperature with a thermal-dependent critical exponent, ν . In low external fields the corresponding value of ν is consistent with the two-dimensional phase-glass model, which is in the same dynamical universality class of the so-called vortex-glass model. At applied fields H > 1000 Oe, the vortex dynamics becomes stronger and the coherence transition is not observed.

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Plasma characterization of a high-pressure d(-Sputtering system used for the “in situ” preparation of high-Tc superconducting thin films

Cited by 12 publications

References 7 publications

High Pressure Deposition of Epitaxial PZT Thin Films on Sr(Nb)TiO₃

High Pressure Deposition of Epitaxial PZT Thin Films on Sr(Nb)TiO₃

Magneto-optical Kerr effect in NiZn ferrite films of variable thickness

Phase‐glass scaling near the coherence transition in granular HoBa₂Cu₃O_7–δ superconducting thin films

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Plasma characterization of a high-pressure d(-Sputtering system used for the “in situ” preparation of high-Tc superconducting thin films

Cited by 12 publications

References 7 publications

High Pressure Deposition of Epitaxial PZT Thin Films on Sr(Nb)TiO3

High Pressure Deposition of Epitaxial PZT Thin Films on Sr(Nb)TiO3

Magneto-optical Kerr effect in NiZn ferrite films of variable thickness

Phase‐glass scaling near the coherence transition in granular HoBa2Cu3O7–δ superconducting thin films

Contact Info

Product

Resources

About

High Pressure Deposition of Epitaxial PZT Thin Films on Sr(Nb)TiO₃

High Pressure Deposition of Epitaxial PZT Thin Films on Sr(Nb)TiO₃

Phase‐glass scaling near the coherence transition in granular HoBa₂Cu₃O_7–δ superconducting thin films