Plasma-assisted vapor deposition processes and some applications

Bunshah, R.F.; Deshpandey, C.V.

doi:10.1016/0257-8972(86)90040-x

Cited by 11 publications

(12 citation statements)

References 42 publications

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“…For any sputtering power shown in Fig. 3, the current increases with the increase of working gas pressure because argon gas density is increased in the magnetron sputtering chamber which results in more particles available to move towards the sputtering target (cathode) [23]. The increase in sputtering current for all the sputtering powers contributes to increasing in sputtering rate finally, which can be noticed in Fig.…”

Section: B Variation In DC Magnetron Sputtering Current and Voltagementioning

confidence: 87%

“…The average optical transmittance in the visible wavelength region 400 ∼ 800 nm of deposited Al films at 80 W and 100 W deposition power is around 96% and 88%, respectively. However, the average transmittance in the wavelength region 400 ∼ 800 nm decreases from 96% to 73% with the increase of deposition power from 80 W to 140 W, which might be due to the increase in Al film thickness, crystal growth, sputtering rate, and grain size [3], [7], [9], [11]- [13], [18], [20], [22], [23]. The higher deposition power usually increases the adatom mobility, sputtering yield, and defects in crystal growth according to magnetron sputtering theory and experimental observations, which contribute to reducing the optical transmittance.…”

Section: B Variation In DC Magnetron Sputtering Current and Voltagementioning

confidence: 99%

“…According to the plasma discharge theory in particle and gas ionization, the sputtering current and voltage play a very important role along with sputtering power and working gas pressure to control the sputtering rate and properties of magnetron-sputtered thin films [3]- [5], [16], [23]. Based on previous empirical and theoretical studies, the sputtering rate increases with the increase of sputtering current due to the higher flow of ionized particles towards the target cathode as the sputtering yield relatively increases.…”

Section: B Variation In DC Magnetron Sputtering Current and Voltagementioning

confidence: 99%

“…At a certain stage with specific sputtering conditions, the increase in voltage with the increase of sputtering power (160, 180, and 200 W) becomes very slow compared to lower sputtering power (80, 100, 120, and 140 W) shown in Fig. 4 and all the supplied energy due to the increase of sputtering power is used to increase the sputtering current value only [5], [16], [23]. In Fig.…”

Section: B Variation In DC Magnetron Sputtering Current and Voltagementioning

confidence: 99%

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Synthesis of Al Thin Films with High Optical Transmittance by DC Magnetron Sputtering Process Parameter Optimization

Rahman

Lee²,

Uddin³

et al. 2023

EJENG

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Nanostructured Al thin film with higher optical transmittance and electrical conductivity has intensive applications in solar cells and optical and microelectronic devices. This experimental-based research study has optimized the DC magnetron sputtering deposition parameters (sputtering power, sputtering current, voltage, and working gas pressure) for Al thin film deposition to obtain the highest optical transmittance and lower sheet resistance. Optical transmittance, surface roughness, film thickness, sheet resistance, grain size, and surface morphology were characterized using UV-vis-NIR spectroscopy, surface profiler, spectroscopic ellipsometry, four-point probe, and FE-SEM, respectively to determine the effects of sputtering process parameters on Al films’ different properties. Experimental investigations reveal that electrical conductivity, surface roughness, grain size, and deposition rate increase with increasing of sputtering power at certain working gas pressure. At the optimized condition (sputtering power 80 W, working gas pressure 5 mTorr, deposition time 5 min and ambient temperature), the relatively higher optical transmittance in visible region 96%, moderate sheet resistance 0.196 ohm/square and lowest average surface roughness 2.86 nm were obtained for Al thin film. After all, this research study will help to understand the best Al film deposition parameters in terms of optical transmittance and electrical conductivity for future research and industrial applications.

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Section: B Variation In DC Magnetron Sputtering Current and Voltagementioning

confidence: 87%

Section: B Variation In DC Magnetron Sputtering Current and Voltagementioning

confidence: 99%

Section: B Variation In DC Magnetron Sputtering Current and Voltagementioning

confidence: 99%

Section: B Variation In DC Magnetron Sputtering Current and Voltagementioning

confidence: 99%

See 2 more Smart Citations

Synthesis of Al Thin Films with High Optical Transmittance by DC Magnetron Sputtering Process Parameter Optimization

Rahman

Lee²,

Uddin³

et al. 2023

EJENG

View full text Add to dashboard Cite

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“…The gas atoms react with the sputtered metal vapour to form compounds on both the substrate and the target. Hence, care must be taken to control poisoning of the target by the reactive gases [33]. Another way to form compound coatings is by direct sputtering a compound target.…”

Section: Sputtering Processmentioning

confidence: 99%

Fabrication, characterisation and property modelling of TiB2 based nanostructured coatings

Panich¹

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Fabrication and development of TiB2-based nanostructured coatings and the development of finite element (FE) models to simulate the nanoindentation and micro-scratch test processes in various coating systems were investigated in the present work. By varying the sputter-target power density, substrate temperature, deposition time, substrate-totarget distance, substrate rotation, substrate biasing and substrate sputter cleaning, the relationship between the sputtered structure properties and sputtering conditions were established. In order to increase the coating/substrate adhesion, interlayer and multilayer techniques between TiB2 and tough material, e.g. Ti and Cr were proposed and employed. Furthermore, techniques to strengthen the sputtered interlayer such as Ti by annealing the resultant coatings at various temperatures and introducing nitrogen gas during interlayer deposition were carried out. The experimental results showed that the target-to-substrate distance played a major role in the coating structure and properties. Sputter cleaning of substrate helped to improve TiB2 coating hardness and adhesion. The deposition process could be controlled to produce a TiB2 coating with both high hardness and good adhesion strength. This was achieved by introducing substrate sputter-cleaning and then biasing for the early stage of deposition, followed by deposition without biasing. Annealing at optimum temperature helped to promote the (001) orientation of the TiB2 coating and improved its hardness, coating adhesion and elastic recovery ability. Substrate rotation was focused to have a significant effect on the structure, orientation, hardness and adhesion strength of sputtered TiB2 coatings. Significant enhancement of the adhesion for the TiB2 coating-HSS substrate was found by optimum doping nitrogen into the Ti interlayer, the use of multilayer and the use of Cr interlayer. During dry sliding wear against an alumina ball, failure of the coating was correlated with the hardness and adhesion of the coatingsubstrate system. With increasing coating hardness and coating-substrate adhesion the wear resistance was increased.

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Development of a Device for Dynamic Simulation of the Breathing System to Evaluate a Functional Nonwoven Fabric Coated with Cu Film

et al. 2023

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One of the challenges to evaluate the performance of functional materials for face masks is to look for a dynamic interaction with biological samples. A device for dynamic simulation of breathing system is constructed and dynamic and static responses of a polypropylene (C3H6)n nonwoven fabric coated with Cu film by magnetron‐sputtering process, against Escherichia coli, are analyzed. The use of scanning electron microscopy, energy‐dispersive spectroscopy, and the 3‐4,5‐dimethylthiazol‐2‐yl)‐2,5‐diphenyltetrazolium bromide (MTT) indirect method using the L929 mouse fibroblasts, and the procedure of Antibacterial Activity of Textile Materials: Parallel Streak (TM147) from American Association of Textile Chemists and Colorists (AATCC) using E. coli and Staphylococcus aureus strains, allows to evaluate the morphological, physicochemical, and biological static performance of the obtained composite. No leaching of the deposited Cu film in the substrate is observed after using the device for dynamic simulation of breathing system. The permeability coefficient of the nonwoven fabric is obtained, equivalent to 71.4 Pa cm−2. By the dynamic response against E. coli bacteria, the best bactericidal activity is observed for S960 with the maximum Cu concentration, presenting a high potential for application as a functional layer in facial masks.

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Plasma-assisted vapor deposition processes and some applications

Cited by 11 publications

References 42 publications

Synthesis of Al Thin Films with High Optical Transmittance by DC Magnetron Sputtering Process Parameter Optimization

Synthesis of Al Thin Films with High Optical Transmittance by DC Magnetron Sputtering Process Parameter Optimization

Fabrication, characterisation and property modelling of TiB2 based nanostructured coatings

Development of a Device for Dynamic Simulation of the Breathing System to Evaluate a Functional Nonwoven Fabric Coated with Cu Film

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