Plasma-assisted synthesis and pressure-induced structural transition of single-crystalline SnSe nanosheets

Abstract

A novel, efficient and simple method for synthesizing SnSe nanosheets, and their pressure-induced structural transition behaviours have been investigated.

Structural Phase Transition and Carrier Density Tuning in SnSexTe1‐x Nanoplates

“…For the SnSe x Te 1‐ x alloy system, systematic calculations of the formation energy of defects as a function of the alloying composition will also be helpful. One caveat for the SnSe x Te 1‐ x alloy in our case is that the most stable structure of SnSe is orthorhombic, not cubic . Thus, we must confirm that the SnSe x Te 1‐ x alloy nanostructure is cubic to ensure that it remains as a TCI.…”

“…If resulting SnSe x Te 1‐ x nanostructures are cubic, they should be TCIs because cubic SnSe and SnTe have been experimentally shown to be TCIs . However, as orthorhombic SnSe is more stable than cubic SnSe, SnSe x Te 1‐ x can also be orthorhombic, thus not a TCI. We systematically map out the crystal structure evolution from the desired cubic structure to the unwanted orthorhombic structure as a function of the Se/Te ratio.…”

Temperature-Dependent Raman Responses of the Vapor-Deposited Tin Selenide Ultrathin Flakes

“…Thus it is available to obtain 2D SnSe ultrathin films via exfoliation or vapor deposition like graphene and other 2D materials. Besides, similar to BP, low lattice symmetry of 2D SnSe may result in extraordinary anisotropy in its electronic, thermal, and mechanical properties. ,, Up to now, a few solution-phase approaches have been applied to prepare SnSe nanostructures, including liquid-phase exfoliation, solvothermal, and electrodeposition. − Besides, vapor depositions have also been carried out to obtain SnSe with high crystalline quality and large scale . Among those methods, vapor deposition is a feasible and controllable way to grow 2D crystalline SnSe thin films with high quality and purity.…”

First-principles study of the structural, optoelectronic and thermophysical properties of the π-SnSe for thermoelectric applications

“…After this energy value, α(ω) starts to decrease with the increase in photon energy, and then another broader peak is observed at ≈10 eV in which α(ω) reaches its maximum value of 154.23 10 4 /cm. From the literature, we have noted that the α-SnSe has an indirect bandgap of 0.9 eV and a direct gap of 1.3 eV [5,[74][75][76]. On the other hand, the optical bandgap value of the 2D SnSe is 1.10 eV [77].…”