Plasma-assisted InP-to-Si low temperature wafer bonding

Pasquariello, D. M.; Hjort, Klas

doi:10.1109/2944.991407

Cited by 219 publications

(144 citation statements)

References 77 publications

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“…The MQW gain and emission spectral purity are improved in the transferred epitaxial layers are probably due to combination effect of the negligible bonding-induced thermal strain, the InGaAsP/InP superlattice at the bonding interface, and the annihilation of the as-grown defects in bonding anneal process. Low bonding-induced strain is observed in the transferred thin III-V epilayers on SOI with diameter of 50, 100 and 150 mm, because of low-temperature anneal at 300°C where thermal stress of InP-to-Si bonding is smaller than critical stress for dislocation generation in the InP [13]. Uniform epitaxial transfer is also shown by demonstrating 0.3-1.2% global strain variation.…”

Section: Resultsmentioning

confidence: 79%

Uniformity study of wafer-scale InP-to-silicon hybrid integration

Liang

Chapman

et al. 2010

Appl. Phys. A

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In this paper we study the uniformity of up to 150 mm in diameter wafer-scale III-V epitaxial transfer to the Si-on-insulator substrate through the O 2 plasma- enhanced low-temperature (300°C) direct wafer bonding. Void-free bonding is demonstrated by the scanning acoustic microscopy with sub-µm resolution. The photoluminescence (PL) map shows less than 1 nm change in average peak wavelength, and even improved peak intensity (4% better) and full width at half maximum (41% better) after 150 mm in diameter epitaxial transfer. Small and uniformly distributed residual strain in all sizes of bonding, which is measured by high-resolution X-ray diffraction Omega2Theta mapping, and employment of a two-period InPInGaAsP superlattice at the bonding interface contributes to the improvement of PL response. Preservation of multiple quantum-well integrity is also verified by high-resolution transmission electron microscopy.

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Section: Resultsmentioning

confidence: 79%

Uniformity study of wafer-scale InP-to-silicon hybrid integration

Liang

Chapman

et al. 2010

Appl. Phys. A

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“…An electrically-injected InAsP/InGaAsP microdisk laser was later demonstrated [85]. One issue with this approach is the quality of the PECVD oxide and the strength of the created bonds and their stability at elevated temperatures [86]. Low heat dissipation of the underlying dielectric SiO 2 layer [see case (a) in Figure 4], leading to degraded laser performance, is another disadvantage of using hydrophilic SiO 2 bonding layers.…”

Section: Iii-v Lasers On Siliconmentioning

confidence: 99%

Emerging heterogeneous integrated photonic platforms on silicon

Fathpour

2015

Nanophotonics

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Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI) waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths) and feasibility of electrically-injected lasers (at least at room temperature). More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the freecarrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III-V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for different purposes with the common feature of integrating them on a single substrate, most notably silicon.

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“…First and most importantly, the difference in thermal expansion coefficient may limit the annealing temperature to avoid thermal stress in the bonded sample. InP wafers bonded to Si wafers, for example, start showing defects when annealed above 300 • C. 3 Secondly, bonding is a surface phenomenon with a strong dependence on the surface chemistry of the bonding surfaces. Thus, the process technology developed for one set of wafers may or may not be adapted to a new pair of materials.…”

Section: Introductionmentioning

confidence: 99%

Low temperature bonding of heterogeneous materials using Al2O3 as an intermediate layer

Sahoo

Ottaviano

Zheng

et al. 2017

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Integration of heterogeneous materials is crucial for many nanophotonic devices. The integration is often achieved by bonding using polymer adhesives or metals. A much better and cleaner option is direct wafer bonding, but the high annealing temperatures required make it a much less attractive option. Direct wafer bonding relies on a high density of hydroxyl groups on the surfaces, which may be difficult to achieve depending on the materials. Thus, it is a challenge to design a universal wafer bonding process. However, using an intermediate layer between the bonding surfaces reduces the dependence on the bonding materials, and thus, the bonding mechanism essentially remains the same. The authors present a systematic study on the use of Al2O3 as an intermediate layer for bonding of heterogeneous materials. The ability to achieve high hydroxyl group density and well-controlled films makes atomic layer deposited Al2O3 an excellent choice for the intermediate layer. The authors have optimized the bonding process to achieve a high interface energy of 1.7 J/m2 for a low temperature annealing of 300 °C. The authors also demonstrate wafer bonding of InP to SiO2 on Si and GaAs to sapphire using the Al2O3 interlayer.

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Plasma-assisted InP-to-Si low temperature wafer bonding

Cited by 219 publications

References 77 publications

Uniformity study of wafer-scale InP-to-silicon hybrid integration

Uniformity study of wafer-scale InP-to-silicon hybrid integration

Emerging heterogeneous integrated photonic platforms on silicon

Low temperature bonding of heterogeneous materials using Al2O3 as an intermediate layer

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