Plasma assisted atomic layer deposition NiO nanofilms for improved hybrid solid state electrochromic device

Kandpal, Suchita; Ezhov, Ilya; Tanwar, Manushree; Nazarov, D. V.; Olkhovskii, Denis; Filatov, L. A.; Maximov, Maxim; Kumar, Rajesh

doi:10.1016/j.optmat.2023.113494

Cited by 5 publications

(6 citation statements)

References 66 publications

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“…Compared with the sol−gel method, the thickness of the ALD NiO film can be accurately controlled to achieve better uniformity and compactness. 47 Furthermore, the plasma-enhanced ALD (PEALD) method was applied to deposit NiO films with fewer defects by adjusting the environmental oxygen (O 2 ). By varying the plasma flow rate of O 2 (0−200 sccm), Ni 2+ and interstitial oxygen vacancies are generated within the NiO film, which could increase the conductivity and density of holes in the NiO film.…”

Section: ■ Introductionmentioning

confidence: 99%

“…In this work, low-temperature atomic layer-deposited (ALD) NiO is used as the electrode buffer layer. Compared with the sol–gel method, the thickness of the ALD NiO film can be accurately controlled to achieve better uniformity and compactness . Furthermore, the plasma-enhanced ALD (PEALD) method was applied to deposit NiO films with fewer defects by adjusting the environmental oxygen (O 2 ).…”

Section: Introductionmentioning

confidence: 99%

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Modified Charge Injection in Green InP Quantum Dot Light-Emitting Diodes Utilizing a Plasma-Enhanced NiO Buffer Layer

Wang,

Fan,

Liu

et al. 2024

J. Phys. Chem. C

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With the growing concern for green and environmentally friendly quantum dots (QDs), the investigation of lowtoxicity heavy-metal-free light-emitting materials and devices has become a research hotspot. Due to their high quantum yield, tunable emission, and environmentally friendly properties, the lowtoxicity III−V InP quantum dot light-emitting devices (QLEDs) have great application potential in next-generation full-color displays and lighting. In this work, charge injection in highperformance green InP QLEDs was modified by using a lowtemperature atomic layer-deposited (ALD) nickel oxide (NiO) buffer layer. The device with the NiO buffer layer effectively suppressed the nonradiative recombination process and enhanced the hole injection, exhibiting a 1.35-fold enhanced external quantum efficiency (EQE). Moreover, different oxygen plasma-enhanced conditions were applied to the deposition of the NiO film. As the ambient oxygen flux increased (50−200 sccm), Ni 2+ and interstitial oxygen vacancies were generated within the NiO film, which effectively improved the hole injection and promoted the carrier balance injection. The best-performing device with a 100 sccm O 2 −NiO film realized a 2.36 times higher EQE (6.75%) than the device without the NiO buffer layer, with a maximum current efficiency (CE) of 12.73 cd/A. The experimental results provide an effective strategy to further improve the charge balance and performance of InP-based QLEDs

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Section: ■ Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Modified Charge Injection in Green InP Quantum Dot Light-Emitting Diodes Utilizing a Plasma-Enhanced NiO Buffer Layer

Wang,

Fan,

Liu

et al. 2024

J. Phys. Chem. C

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“…NiO is widely used by researchers due to its exceptional characteristics. This material is used in various fields, such as battery cathodes [2], solar cells [3], electrochromic coatings [4], antiferromagnetic materials [5], smart windows [6], and supercapacitors [7], due to its remarkable properties such as having a wide band gap ranging between 3.6 to 4.0 eV. The surface area, color, and nonstoichiometric levels of NiO samples can vary depending on the preparation conditions [8].…”

Section: Introductionmentioning

confidence: 99%

Undoped and Li-Doped NiO Coral Reef-like Structures Fabricated using Immersion Method

Ladjahirin,

Parimon,

Mamat

et al. 2024

MATEC Web Conf.

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Nickel oxide (NiO) is one of the p-type semiconductors with unique properties suitable for nanosensor applications. It has a wide range band gap and can be fabricated in various methods, leading to different nanostructures and results. In this study, undoped and lithium (Li)-doped NiO were fabricated using the immersion method to investigate their properties. The field emission scanning electron microscopy analysis revealed that both samples produced two layers of nanosheet and nano coral reef-like (CR) structures. X-ray diffraction patterns confirmed the average crystallite sizes for undoped and Li-doped NiO are 24.70 nm and 31.19 nm, respectively. According to ultraviolet-visible spectroscopy, Li-doped NiO has a higher average transmittance percentage of 53% compared to undoped NiO, which has 40%. The estimated optical band gap values are not much different, with 3.94 eV for undoped and 3.95 eV for Li-doped. Electrical measurements also indicated that Li-doped NiO has a higher conductivity value of 7.9 x 10-2 S.m-1, whereas undoped NiO has 7.71 x 10-2 S.m-1.

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“…Therefore, the development of EC materials that can serve with high stability, balanced EC performance, and wide color modulation capability in various moist, dry, and saline environments, in contact with aqueous or nonaqueous liquids, is greatly desired. 10,11 Compared to those commonly used fabrication methods for EC materials such as sputtering, e-beam evaporation, spin coating, sol−gel, hydrothermal, or inkjet printing, 2,7,9,12 atomic layer deposition (ALD) is a much less explored fabrication method for EC coating 13,14 but can offer the most impermeable functional layer. 14 Previous studies only reported ALD coating as a stabilization overlayer for the EC device.…”

Section: Introductionmentioning

confidence: 99%

“…Compared to those commonly used fabrication methods for EC materials such as sputtering, e-beam evaporation, spin coating, sol–gel, hydrothermal, or inkjet printing, ,,, atomic layer deposition (ALD) is a much less explored fabrication method for EC coating , but can offer the most impermeable functional layer . Previous studies only reported ALD coating as a stabilization overlayer for the EC device. , This work attempts to fill this gap by exploring ALD-grown EC coatings as a subset of emerging EC materials that potentially possess both excellent EC performance and high stability.…”

Section: Introductionmentioning

confidence: 99%

Multicolor Bipolar Modulation of Titanium–Chromium Oxide Electrochromic Coatings

Shen

Yang

ChengXing

et al. 2023

ACS Appl. Electron. Mater.

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Electrochromic (EC) materials offer wide-ranging commercial applications, including smart windows, electrochromic mirrors, and programmable static displays. While many conventional electrochromic applications require the encapsulation of the EC materials and other components inside a sealed cell, there are cases where the color appearance of the object’s surface needs to be durable in atmospheric or aquatic environments. Among the current fabrication methods for EC materials, atomic layer deposition (ALD) remains less explored. In this work, we fill these gaps by employing ALD to grow a (Ti,Cr)O x film as a new subset of EC coatings that operates in direct contact with aqueous solutions. The protective and bipolar coloration properties of the (Ti,Cr)O x are achieved by the ALD alloying of TiO2 and CrO x nanocrystals. Intrinsic EC performance showed excellent cycle stability of more than 2000 cycles in aqueous electrolytes of high salinity and high corrosion resistance in pH = 0 acid. Furthermore, multicolor modulation has been achieved via a Fabry–Perot optical cavity design. Microstructural and spectroscopic characterizations combined with finite-difference time-domain (FDTD) modeling allow us to correlate the optical appearance with coating electronic and microstructures. This work showed that this ALD-grown ternary EC coating can also act as a surface protection layer and has unique advantages over other EC materials to achieve balanced performance among color tunability, coloration efficiency, and cycle stability.

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Plasma assisted atomic layer deposition NiO nanofilms for improved hybrid solid state electrochromic device

Cited by 5 publications

References 66 publications

Modified Charge Injection in Green InP Quantum Dot Light-Emitting Diodes Utilizing a Plasma-Enhanced NiO Buffer Layer

Modified Charge Injection in Green InP Quantum Dot Light-Emitting Diodes Utilizing a Plasma-Enhanced NiO Buffer Layer

Undoped and Li-Doped NiO Coral Reef-like Structures Fabricated using Immersion Method

Multicolor Bipolar Modulation of Titanium–Chromium Oxide Electrochromic Coatings

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