Atomic layer deposition (ALD) is a type of chemical vapour deposition (CVD), except the alternative purging precursor and oxidant/ reductant, which react in self-limiting mode to grow the desired products in a binary reaction cycle. Owing to the two sequential half-reactions, the film growth in ALD technique is dense and compounds control. In this work, we employ thermal ALD (T-ALD) to grow Al 2 O 3 on pre-treated poly(ethylene terephthalate) (PET) surface with the purpose of improvement of the barrier properties. The different interfacial species are obtained by a variety of pre-treatments with-COOH,-NH 3 ,-OH,-CO-and-COOH as well as SiCHO groups on surfaces. We find that O 2 plasma treatment can lead to the nucleation particles of Al 2 O 3 that are relatively dense and small on PET, which is believed to promote Al 2 O 3 growth in pinhole-free mode and provide better barrier properties.