Planck's generalised radiation law and its implications for cathodoluminescence spectra

Mendis, Budhika G.

doi:10.1016/j.ultramic.2019.05.007

Cited by 7 publications

(2 citation statements)

References 34 publications

(60 reference statements)

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“…It is important to ensure that the injection density does not impact the shape of luminescence spectra and the assessment of carrier densities [21]. The injection regime of CL measurements can be estimated as follows.…”

Section: Methodsmentioning

confidence: 99%

Quantitative Assessment of Carrier Density by Cathodoluminescence. I. GaAs Thin Films and Modeling

et al. 2021

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Doping is a fundamental property of semiconductors and constitutes the basis of modern microelectronic and optoelectronic devices. Their miniaturization requires contactless characterization of doping with nanometer scale resolution. Here, we use low-and room-temperature cathodoluminescence (CL) measurements to analyze p-type and n-type GaAs thin films over a wide range of carrier densities (2 × 10 17 to 1 × 10 19 cm −3 ). The spectral shift and broadening of CL spectra induced by shallow dopant states and band filling are the signature of doping. We fit the whole spectral lineshapes with the generalized Planck law and refined absorption models to extract the bandgap narrowing (BGN) and the band tail for both doping types, and the electron Fermi level for n doping. This work provides a rigorous method for the quantitative assessment of p-type and n-type carrier density using CL. Taking advantage of the high spatial resolution of CL, it can be used to map the doping in GaAs nanostructures, and it could be extended to other semiconductor materials.

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Section: Methodsmentioning

confidence: 99%

Quantitative Assessment of Carrier Density by Cathodoluminescence. I. GaAs Thin Films and Modeling

et al. 2021

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“…According to the liquidus temperature and the temperature measured by the infrared thermometer, the emissivity of the alloy melt under the experimental conditions was calculated by Eq. (1) 12 . The material parameters and calculated results are listed in Table 1.…”

Section: Resultsmentioning

confidence: 99%

The effect of phosphorus on solidification behaviour of undercooled Al–70 wt.%Si alloys

Dang

Jian

2020

Sci Rep

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Effect of refining element phosphorus (P) on the morphology of the primary silicon in the Al–70 wt.%Si alloy was investigated via the electromagnetic levitation (EML) technique. The morphology and microstructure were analyzed by using high-speed video (HSV) and scanning electron microscopy (SEM). It was found that the morphology of primary silicon transformed from dendrites with several branches to blocky shape, and then to equiaxed grains in Al–70 wt.%Si and Al–70 wt.%Si–1.0 wt.%P alloys with increasing of undercooling. The nucleation number and nucleation rate increased exponentially with the increase of undercooling for both alloys. Finally, the growth velocity of primary silicon was discussed in combination with classical theory.

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Failure mechanism and infrared radiation characteristic of hard siltstone induced by stratification effect

Cheng,

Song,

et al. 2024

J. Mt. Sci.

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Planck's generalised radiation law and its implications for cathodoluminescence spectra

Cited by 7 publications

References 34 publications

Quantitative Assessment of Carrier Density by Cathodoluminescence. I. GaAs Thin Films and Modeling

Quantitative Assessment of Carrier Density by Cathodoluminescence. I. GaAs Thin Films and Modeling

The effect of phosphorus on solidification behaviour of undercooled Al–70 wt.%Si alloys

Failure mechanism and infrared radiation characteristic of hard siltstone induced by stratification effect

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