Planarization of Si Ridges in Sequential Lateral Solidification Process

Abstract

The heights of ridges, which are formed after crystallizing amorphous Si films, vary linearly to the initial film thicknesses. Post laser treatments on ridges have an effect of leveling the heights of ridges and lead to improved thin-film transistor characteristics. Relevant parameters influencing the planarization process are discussed. The optimum energy for planarization corresponds to the energy at which ridge peak blunting is maximum.

Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils

“…On top of the buffer layer, we deposited an 80 nm-thick a-Si film as an active layer at a sputtering condition of 4.0 W/cm 2 and , and thus, the layer stacking is inherently unstable [9]. Since the a-Si film is completely melted during the SLS process, it is very important to suppress liquid film dewetting during the solidification of Si.…”