2015
DOI: 10.1364/oe.23.000998
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Planar-type polarization beam splitter based on a bridged silicon waveguide coupler

Abstract: We demonstrate a compactly integrated polarization beam splitter (PBS) with high polarization extinction ratios greater than 20 dB over the full C-band wavelength range based on a simple bridged silicon nanowaveguide directional coupler. The PBS device is designed via three dimensional finite-difference time-domain (3D-FDTD) simulation, and fabricated experimentally. The optimum dimension of the bridge waveguide is determined to be 7.5-μm-long and 500 nm-wide for 250-nm thick silicon core. At the 1,550-nm wave… Show more

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Cited by 111 publications
(38 citation statements)
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“…However, the input TE power is directly coupled to the Si waveguide (enclosed in ) adjoined to the front Si waveguide without an additional coupling length that would otherwise be used in conventional DC-based PBSs 2, 2030 , which makes the proposed PBS device extremely short. The output TE port is designed to 175 nm high so as to cut off the TM power and 600 nm wide () so that the TE power can be as high as possible.…”
Section: Resultsmentioning
confidence: 99%
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“…However, the input TE power is directly coupled to the Si waveguide (enclosed in ) adjoined to the front Si waveguide without an additional coupling length that would otherwise be used in conventional DC-based PBSs 2, 2030 , which makes the proposed PBS device extremely short. The output TE port is designed to 175 nm high so as to cut off the TM power and 600 nm wide () so that the TE power can be as high as possible.…”
Section: Resultsmentioning
confidence: 99%
“…Nevertheless, the minimum dimensions of the devices 23, 24, 26 are larger than 300 nm, thus the devices can be fabricated by a more efficient photolithography technology but the resolution of using photolithography is limited by the used wavelength (157 nm for deep UV light). Certainly, for some DC-based devices 20, 22, 25, 2730 , they used single Si waveguide structures evading the overlay control problem, simplifying the fabrication processes and reducing the overlay deviation. In order to analyze the performance of our PBS device, we first need to determine the mode properties at the input port.…”
Section: Resultsmentioning
confidence: 99%
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“…On the silicon-on-insulator (SOI) platform, directional coupler [15][16][17] and multimode interferometer (MMI) [18,19] based PBSs with low loss, high extinction ratio (ER) and wide bandwidth have been demonstrated. However, these kinds of devices become considerably long on the SiN platform due to the reduction in ∆neff between the fundamental TE and TM polarizations.…”
Section: Introductionmentioning
confidence: 99%