Planar MoRe-based direct current nanoSQUID

Shishkin, Andrey G.; Skryabina, O. V.; Гуртовой, В. Л.; Dizhur, S. E.; Faley, M.I.; Golubov, A. A.; Stolyarov, V. S.

doi:10.1088/1361-6668/ab877c

Cited by 7 publications

(13 citation statements)

References 46 publications

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“…1). From this fit, we extracted a London penetration depth l L = 405(10) nm at T = 5.5 K, which agrees well with static-field nano-superconducting quantum interference device measurements (28).…”

Section: Temperature-and Field Dependence Of the Spin-wave Dispersion...supporting

confidence: 80%

Observation and control of hybrid spin-wave–Meissner-current transport modes

Borst,

Vree,

Lowther

et al. 2023

Science

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Superconductors are materials with zero electrical resistivity and the ability to expel magnetic fields, which is known as the Meissner effect. Their dissipationless diamagnetic response is central to magnetic levitation and circuits such as quantum interference devices. In this work, we used superconducting diamagnetism to shape the magnetic environment governing the transport of spin waves—collective spin excitations in magnets that are promising on-chip signal carriers—in a thin-film magnet. Using diamond-based magnetic imaging, we observed hybridized spin-wave–Meissner-current transport modes with strongly altered, temperature-tunable wavelengths and then demonstrated local control of spin-wave refraction using a focused laser. Our results demonstrate the versatility of superconductor-manipulated spin-wave transport and have potential applications in spin-wave gratings, filters, crystals, and cavities.

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Section: Temperature-and Field Dependence Of the Spin-wave Dispersion...supporting

confidence: 80%

Observation and control of hybrid spin-wave–Meissner-current transport modes

Borst,

Vree,

Lowther

et al. 2023

Science

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“…Thermal hysteresis is observed in nanobridge JJs that have sufficiently large critical currents I c , while the I ( φ ) dependence becomes multivalued when the length L of a nanobridge JJ exceeds the coherence length ξ by a factor of ~3.5 [ 1 ], depending on the shape of the nanobridge. In Nb thin films, ξ (0 K) is ~10 nm, resulting in the need for sophisticated 10 nm preparation technology for non-hysteretic operation [ 2 , 3 , 4 ]. Nb-based nanobridge JJs that have a length of ~100 nm show non-hysteretic operation only over a narrow temperature range above 7.2 K [ 5 ].…”

Section: Introductionmentioning

confidence: 99%

Titanium Nitride as a New Prospective Material for NanoSQUIDs and Superconducting Nanobridge Electronics

2021

Self Cite

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Nanobridge Josephson junctions and nanometer-scale superconducting quantum interference devices (nanoSQUIDs) based on titanium nitride (TiN) thin films are described. The TiN films have a room temperature resistivity of ~15 µΩ·cm, a superconducting transition temperature Tc of up to 5.3 K and a coherence length ξ(4.2 K) of ~105 nm. They were deposited using pulsed DC magnetron sputtering from a stoichiometric TiN target onto Si (100) substrates that were heated to 800 °C. Electron beam lithography and highly selective reactive ion etching were used to fabricate nanoSQUIDs with 20-nm-wide nanobridge Josephson junctions of variable thickness. X-ray and high-resolution electron microscopy studies were performed. Non-hysteretic I(V) characteristics of the nanobridges and nanoSQUIDs, as well as peak-to-peak modulations of up to 17 µV in the V(B) characteristics of the nanoSQUIDs, were measured at 4.2 K. The technology offers prospects for superconducting electronics based on nanobridge Josephson junctions operating within the framework of the Ginzburg–Landau theory at 4.2 K.

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“…The magnetic flux resolution of the present measurement system √ S Φ ∼ = √ S v /(∂V/∂Φ) 1.9 µΦ 0 / √ Hz, where the derivative ∂V/∂Φ ∼ = 525 µV/Φ 0 . For comparison with other planar nanoSQUIDs, flux noise values of 1.7 µΦ 0 / √ Hz [22] and 0.3 µΦ 0 / √ Hz [23] have been achieved for nanoSQUIDs with hysteretic I(V) characteristics measured at temperatures of T c . By increasing the thickness of the NbN layer, nanoSQUIDs with NbN-TiN-NbN nJJs also become hysteretic in their I(V) characteristics.…”

Section: Discussionmentioning

confidence: 99%

“…Multilayers of NbN/TiN have enhanced mechanical, anticorrosion, and superconducting properties when compared with single-layer NbN and TiN films [18][19][20]. MoRe is another corrosion-resistant superconducting material that has been used for the preparation of nanoSQUIDs [21,22]. Thin films of NbN and MoRe have relatively large energy gaps 2∆ ~5 meV.…”

Section: Introductionmentioning

confidence: 99%

“…Thin films of NbN and MoRe have relatively large energy gaps 2∆ ~5 meV. However, their T c values of up to ~16 K and their very short coherence lengths ξ of ~5 nm lead to difficulties in the realization of non-hysteretic nanoSQUIDs with nJJs at an operation temperature of 4.2 K [22][23][24]. NJJs and nanoSQUIDs that are based on nJJs can have hysteretic I(V) characteristics, as a result of (1) the effect of nJJ overheating hysteresis [7,25], or (2) an ambiguity in the I(ϕ) characteristics of nJJs [25,26] in the case of large nJJs when their length is >3.5 ξ [26].…”

Section: Introductionmentioning

confidence: 99%

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A Self-Flux-Biased NanoSQUID with Four NbN-TiN-NbN Nanobridge Josephson Junctions

Faley

Dunin-Borkowski

2022

Electronics

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We report the development of a planar 4-Josephson-junction nanoscale superconducting quantum interference device (nanoSQUID) that is self-biased for optimal sensitivity without the application of a magnetic flux of Φ0/4. The nanoSQUID contains novel NbN-TiN-NbN nanobridge Josephson junctions (nJJs) with NbN current leads and electrodes of the nanoSQUID body connected by TiN nanobridges. The optimal superconducting transition temperature of ~4.8 K, superconducting coherence length of ~100 nm, and corrosion resistance of the TiN films ensure the hysteresis-free, reproducible, and long-term stability of nJJ and nanoSQUID operation at 4.2 K, while the corrosion-resistant NbN has a relatively high superconducting transition temperature of ~15 K and a correspondingly large energy gap. FIB patterning of the TiN films and nanoscale sculpturing of the tip area of the nanoSQUID’s cantilevers are performed using amorphous Al films as sacrificial layers due to their high chemical reactivity to alkalis. A cantilever is realized with a distance between the nanoSQUID and the substrate corner of ~300 nm. The nJJs and nanoSQUID are characterized using Quantum Design measurement systems at 4.2 K. The technology is expected to be of interest for the fabrication of durable nanoSQUID sensors for low temperature magnetic microscopy, as well as for the realization of more complex circuits for superconducting nanobridge electronics.

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Planar MoRe-based direct current nanoSQUID

Cited by 7 publications

References 46 publications

Observation and control of hybrid spin-wave–Meissner-current transport modes

Observation and control of hybrid spin-wave–Meissner-current transport modes

Titanium Nitride as a New Prospective Material for NanoSQUIDs and Superconducting Nanobridge Electronics

A Self-Flux-Biased NanoSQUID with Four NbN-TiN-NbN Nanobridge Josephson Junctions

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