Planar-integrated single-crystalline perovskite photodetectors

Saidaminov, Makhsud I.; Adinolfi, Valerio; Comin, Riccardo; Abdelhady, Ahmed L.; Peng, Wei; Dursun, İbrahim; Yuan, Mingjian; Hoogland, Sjoerd; Sargent, Edward H.; Bakr, Osman M.

doi:10.1038/ncomms9724

Cited by 654 publications

(636 citation statements)

References 37 publications

(43 reference statements)

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“…The fabricated MAPbBr 3 photodetector also showed a broadband spectral response upon bottom illumination, since photogenerated charge carriers can be collected efficiently in the vicinity of the electrodes, in accordance with previous reports. 11,19 Moreover, the MAPbBr 3 based photodetector exhibited the peak EQE of 0.14% at 550 nm (Fig. S5 of the supplementary material), which is close to the reported 0.2%, 17 confirming the enhanced performance of our core-shell heterojunction.…”

supporting

confidence: 84%

“…Saidaminov and co-workers produced a planar-integrated single-crystalline MAPbBr 3 (CH 3 NH 3 ¼ MA) photodetector with a large responsivity exceeding 4000 A W À1 at the bias voltage of 5 V using a green monochromatic (k ¼ 520 nm) source. 11 Maculan and coworkers fabricated a MAPbCl 3 single crystal based photodetector with the responsivity of 46.9 mA W À1 at the bias voltage of 15 V under illumination with 365 nm UV light. 12 However, as we all know, the common operation modes of photodetectors based on the photovoltaic effect can be roughly divided into photoconduction and photocurrent, 13 for one-component single-crystal perovskite photodetectors based on the photoconduction mode, a certain operating voltage is indispensable, which makes the photodetectors uneconomical.…”

mentioning

confidence: 99%

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Perovskite heterojunction based on CH3NH3PbBr3 single crystal for high-sensitive self-powered photodetector

Cao

Tian

Cai

et al. 2016

Applied Physics Letters

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Perovskite single crystals exhibit extraordinary optoelectronic performances due to their advantages such as low trap-state densities, long carrier diffusion, and large absorption coefficient, and thus, photodetectors based on perovskite single crystals have attracted much research interest. Unlike the reported one-component single-crystal perovskite photodetectors, here, we have developed a facile two-step approach to fabricate a core-shell heterojunction based on the CH3NH3PbBr3 single crystal. A photodetector made of the as-prepared perovskite heterojunction renders the feature of self-power attributed to a built-in electric field in the junction and exhibits a wavelength-dependent responsivity with a peak responsivity up to 11.5 mA W−1 under 450 nm irradiation at zero bias, which is one order of magnitude higher than the CH3NH3PbBr3 single crystal and shows a maximum external quantum efficiency of 3.17%, also higher than the reported 0.2% of the CH3NH3PbBr3 single crystal. Our work may lead to more efficient self-powered heterojunction systems based on perovskite single crystals.

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confidence: 84%

mentioning

confidence: 99%

Perovskite heterojunction based on CH3NH3PbBr3 single crystal for high-sensitive self-powered photodetector

Cao

Tian

Cai

et al. 2016

Applied Physics Letters

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“…95 Ultrafast infrared photodetection with moderate quantum efficiencies has been recently reported by Gao et al by the fabrication of nanosized PbSe microstrip photodetectors. 96 From a materials perspective, exciting directions are open by the use of recently reported material platforms.…”

Section: Mhps)mentioning

confidence: 98%

Solution-processed semiconductors for next-generation photodetectors

et al. 2017

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“…Several types of photodetectors based on photoconductors, photodiodes and phototransistors with broadband absorption [125][126][127][128][129] and tunable narrowband absorption 5,130 in the visible have been demonstrated, both being interesting features for sensitized photo-FETs.…”

Section: Ideal Sensitizer Characteristicsmentioning

confidence: 99%

Photo-FETs: Phototransistors Enabled by 2D and 0D Nanomaterials

2016

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The large diversity of applications in our daily lives that rely on photodetection Photodetectors are one of the key components in many optoelectronic devices which transduce optical into electrical information. Today, photodetectors have reached a mature technology level and address a huge application spectrum including imaging, remote sensing, fibre-optic communication and spectroscopy among many others. However, to tackle challenges and to surpass existing limitations in sensitivity of state-of-the-art photodetector systems, new device architectures and material systems are needed which offer low-cost fabrication and high performance over a wide spectral range. The active research field on photodetection grows and many novel nanostructured material systems 1 have been employed for light sensing including Quantum dots 2,3 , Perovskites 4,5 , organic molecules and polymers 6,7 , Carbon Nanotubes 8,9 , Graphene 10,11 and the large field of semiconducting 2D materials such as the transition metal dichalcogenides (TMDCs) and black phosphorus 12,13 .Photodetector performance is governed by both the optical and electronic properties of the employed semiconductor. The former determines the spectral coverage and quantum efficiency of the detector whereas the latter determines, through the carrier transport and carrier density, the amount of dark current flowing through the device, as well as the efficiency of charge separation and collection upon illumination. The key parameters for a strong signal response are a high photon to electron conversion rate (quantum efficiency) and ideally an inherent gain 3 mechanism, which yields multiple carriers per absorbed photon. The response signal is then weighed against the noise portion of the ratio, which has to be minimized for maximum sensitivity. There are several device-external noise sources, such as the photon noise due to the statistical arrival of photons on the device or the read-out noise in photodetector arrays that originates in preamplifier electronics. Here, we will put emphasis on the device (photodetector pixel) inherent noise, which stems partially from thermally generated charge carriers and also from the intrinsic carrier density that contribute to the dark current of the device (shot noise limit) as well as flicker noise (1/f). It is however important to note that the sensitivity of a detector with inherent noise lower than the noise floor of commercially used CMOS read-out circuits, typically met in photodiodes, is limited by the latter, thus a photodetector technology with an inherent gain mechanism is desired to alleviate this effect.The relevant performance metrics and terminology used throughout this article are described in Box 1. Box 1 -Performance metrics for photodetection Responsivity [A/W]The fundamental process behind photodetection is absorption of light. Responsivity R, a measure of output current per incoming optical power in units of A/W, describes how a detector system responds to illumination. Responsivity depends on the incident...

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Planar-integrated single-crystalline perovskite photodetectors

Cited by 654 publications

References 37 publications

Perovskite heterojunction based on CH3NH3PbBr3 single crystal for high-sensitive self-powered photodetector

Perovskite heterojunction based on CH3NH3PbBr3 single crystal for high-sensitive self-powered photodetector

Solution-processed semiconductors for next-generation photodetectors

Photo-FETs: Phototransistors Enabled by 2D and 0D Nanomaterials

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