Planar Hall Effect in the Charge-Density-Wave Bi₂Rh₃Se₂

Abstract

Here, systematic studies on the in-plane transport properties of the ternary chalcogenide Bi2Rh3Se2 are investigated. Upon rotating the magnetic field within the plane of the sample, one can distinctly detect the presence of both planar Hall resistance and anisotropic longitudinal resistance, phenomena are precisely described by the theoretical formulation of the planar Hall effect (PHE). In addition, anisotropic orbital magnetoresistance rather than topologically nontrivial chiral anomalies dominates the PHE in Bi2Rh3Se2. The finding not only provides another platform for understanding the mechanism of PHE, but could also be beneficial for future planar Hall sensors based on two-dimensional materials.