Planar channelling of relativistic electrons in half-wave silicon crystal and corresponding radiation

Abstract

Abstract. New experimental data on planar channeling of 255 MeV electrons in a 0.74 µm Si Half-Wave Crystal (HWC) obtained at SAGA-LS facility are presented. The computer simulation showed that the angular distribution of electrons after penetration through the HWC revealed the number of unknown before peculiarities is connected with specific electron trajectories in HWC. These specific trajectories lead to specific radiation, the properties of which are analyzed.

Study Zitterbewegung effect in a Quasi One-dimensional Relativistic Quantum Plasma by DHW formalization

“…Also, electrons in different semiconductors experience environment with various dielectric constant. For the sake of simplicity, we assume quasi-one-dimensional and elongated quantum plasma with p x ≪ m * c and p y ≪ m * c, which might be formed in half-wavelength silicon crystal [49,50]. Here m * is the effective mass of the electrons in silicon [51].…”