Plan-view transmission electron diffraction measurement of roughness at buried Si/SiO2 interfaces

Gibson, J. M.; Lanzerotti, Mary; Elser, Veit

doi:10.1063/1.102280

Cited by 55 publications

(27 citation statements)

References 16 publications

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“…͑3͒ In contrast, the etching of Si at the Si/SiO 2 interface through volatile SiO extraction occurs preferentially at steps; 18 it would tend to reduce the step density. ͑4͒ The average step spacing at the ͑111͒ Si/SiO 2 interface is drastically reduced ͑order of magnitude͒ by high-T annealing in inert ambient ͑1050°C; N 2 ; 1 h͒, 19 the effect decreasing 20 with T ͓nonoxidizing conditions are flattening, in compliance with ͑3͔͒. ͑5͒ As electrically detected from Tр750°C onward ͑coinciding with the present T range͒, oxide degradation resulting from POA in O-free ambient is firmly correlated with SiO formation.…”

supporting

confidence: 51%

Thermally induced interface degradation in (111) Si/SiO2traced by electron spin resonance

Stesmans

Afanasʼev

1996

Phys. Rev. B

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Thermal post-oxidation interface degradation in ͑111͒ Si/SiO 2 has been isolated by electron-spin resonance ͑ESR͒ as a permanent P b ͑SiwSi 3 ͒ interface defect creation. This process, initiating from ϳ640°C onward, reveals interface breakdown on an atomic scale as interfacial SiO bond rupture. The crucial creation step has been isolated as thermal cycling in an O-free ambient. Once created, the new P b system exhibits similar fully reversible H passivation-depassivation kinetics as the preexisting one, naturally introduced during oxidation. ESR is herewith raised to a powerful probe for Si/SiO 2 degradation.

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supporting

confidence: 51%

Thermally induced interface degradation in (111) Si/SiO2traced by electron spin resonance

Stesmans

Afanasʼev

1996

Phys. Rev. B

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“…The SAED pattern (Figure 4 (c) inset), taken from the kinked NW, which corresponds to the [1][2][3][4][5][6][7][8][9][10][11] zone axis, shows additional reflections at 1/3{(-224)}-type positions, which are related to the stacking fault content in this kinked NW. As previously noted by Gibson et al 39 for crystalline Si, a 20 complete diamond cubic unit cell having an AaBbCc stacking sequence, produces diffracted amplitude from each pair of layers that are phase shifted by 120°, resulting in exactly zero intensity at the 1/3 (-224)-type position. However, since a real specimen may contain 3 n+1 or 3 n+2 layers in some areas, (i.e.…”

Section: Kinked Nw Analysismentioning

confidence: 66%

Role of Defects and Growth Directions in the Formation of Periodically Twinned and Kinked Unseeded Germanium Nanowires

Geaney

Dickinson

Weng

et al. 2011

Crystal Growth & Design

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Here we show the impact of preferred growth directions and defects in the formation of complex Ge nanowire (NW) structures grown by a simple organic medium based synthesis. Various types of NWs are examined including: straight defect free NWs; periodically bent NWs with precise angles between the NW segments; NWs with mutually exclusive lateral or longitudinal faults; and more complex "wormlike" structures. We show that choice of solvent and reaction temperature can be used to tune the morphology of the NWs formed. The various types of NWs were probed in depth using transmission electron microscopy (TEM), scanning electron microscopy (SEM), selected area electron diffraction (SAED), and dark field TEM (DFTEM).

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“…Selected area electron diffraction patterns of silicon nanowire samples of up to ϳ60 nm in diameter shows the same pattern, with bright {220} spots and six smaller anomalous spots with weaker intensity inside the {220}. The spots that correspond with the type 1 3 {4 22} and have also been seen in [111] diffraction from fcc films such as gold or silicon (Morris et al, 1968;Gibson et al, 1989).…”

Section: Anomalous Diffraction From Nanowiresmentioning

confidence: 66%

Imaging and analysis of nanowires

Bell

Barrelet

et al. 2004

Microscopy Res & Technique

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We used vapor-liquid-solid (VLS) methods to synthesize discrete single-element semiconductor nanowires and multicomposition nanowire heterostructures, and then characterized their structure and composition using high-resolution electron microscopy (HRTEM) and analytical electron microscopy techniques. Imaging nanowires requires the modification of the established HRTEM imaging procedures for bulk material to take into consideration the effects of finite nanowire width and thickness. We show that high-resolution atomic structure images of nanowires less than 6 nm in thickness have lattice "streaking" due to the finite crystal lattice in two dimensions of the nanowire structure. Diffraction pattern analysis of nanowires must also consider the effects of a finite structure producing a large reciprocal space function, and we demonstrate that the classically forbidden 1/3 [422] reflections are present in the [111] zone axis orientation of silicon nanowires due to the finite thickness and lattice plane edge effects that allow incomplete diffracted beam cancellation. If the operating conditions are not carefully considered, we found that HRTEM image delocalization becomes apparent when employing a field emission transmission electron microscope (TEM) to image nanowires and such effects have been shown to produce images of the silicon lattice structure outside of the nanowire itself. We show that pseudo low-dose imaging methods are effective in reducing nanowire structure degradation caused by electron beam irradiation. We also show that scanning TEM (STEM) with energy dispersive X-ray microanalysis (EDS) is critical in the examination of multicomponent nanowire heterostructures.

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Plan-view transmission electron diffraction measurement of roughness at buried Si/SiO2 interfaces

Cited by 55 publications

References 16 publications

Thermally induced interface degradation in (111) Si/SiO2traced by electron spin resonance

Thermally induced interface degradation in (111) Si/SiO2traced by electron spin resonance

Role of Defects and Growth Directions in the Formation of Periodically Twinned and Kinked Unseeded Germanium Nanowires

Imaging and analysis of nanowires

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