pJ-Level Energy-Consuming, Low-Voltage Ferroelectric Organic Field-Effect Transistor Memories

Pei, Mengjiao; Qian, Jun; Jiang, Sai; Guo, Jun; Yang, Chengdong; Pan, Danfeng; Wang, Qijing; Wang, Xinran; Shi, Yi

doi:10.1021/acs.jpclett.9b00864

Cited by 30 publications

(26 citation statements)

References 45 publications

(74 reference statements)

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“…Besides, under the effective modulations of interactions at semiconductor/dielectric interfaces, the prominent features combined with the unique merits of material versatility and ease of processing allow OFETs suitable for various potential functional applications, such as photoelectric detection, biosensing, and data storage. Pei et al scaled down the organic functional layers to a 2D limit with good uniformity over a large area [123]. The quasi-2D ferroelectric dielectric layers are beneficial for low-voltage operations.…”

Section: Modulations Of Interactions At Semiconductor/dielectric Intementioning

confidence: 99%

Semiconductor/dielectric interface in organic field-effect transistors: charge transport, interfacial effects, and perspectives with 2D molecular crystals

Pei

Guo

Zhang

et al. 2020

Advances in Physics: X

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Organic field-effect transistors (OFETs) have been the hotspot in information science for many years as the most fundamental building blocks for state-of-the-art organic electronics. During the field-effect modulation of the semiconducting channel, the gate dielectric always has a significant influence on the charge transport behaviours. Hence, understanding of the nature of charge carriers at the semiconductor/dielectric interface and realizing functional OFETs with superior performance have been the cornerstones for the sustainable advancement in organic electronics. With the joint efforts of predecessors, various basic theories and models have been advanced to describe the charge transport processes in organic crystals. To make a further breakthrough, more accurate correlation between the electrostatic properties of dielectrics and charge carrier behaviours is urgently needed. The high-quality interface-like films, without nonideal factors, two-dimensional molecular crystals (2DMCs), have been spotted as a powerful platform for direct and accurate characterization of the intrinsic charge transport behaviours at the semiconductor/dielectric interface. In this article, the recent breakthroughs in the physics of charge transport, interfacial effects, and perspectives with 2DMCs in OFETs are reviewed, providing great benefits to penetrate the fundamental studies and keep up with the revolutionary advancement in organic-electronics road map.

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Section: Modulations Of Interactions At Semiconductor/dielectric Intementioning

confidence: 99%

Semiconductor/dielectric interface in organic field-effect transistors: charge transport, interfacial effects, and perspectives with 2D molecular crystals

Pei

Guo

Zhang

et al. 2020

Advances in Physics: X

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“…For example, Xu et al utilized a P(VDF-TrFE-CTFE) film with low coercive field to develop a Fe-OFET NVM with low operating voltage. Construction of the compound gate dielectric layer was an ultrathin P(VDF-TrFE-CTFE) film sandwiched in between two layers ultrathin high-κ AlO x [112,114]. The sandwich-structured dielectric layer made a contribution to reduce the operating voltage, depress the gate leakage and improve the mobility.…”

Section: Other Low-power Consumption Devicesmentioning

confidence: 99%

“…The sandwich-structured dielectric layer made a contribution to reduce the operating voltage, depress the gate leakage and improve the mobility. Therefore, the device exhibited a low operating voltage of 4 V and the on-off ratio was over 10 2 at the low P/E voltages of ±4 V. In addition, Pei et al reported ultra-low-powerconsumption memory, namely, C 8 -BTBT-based Fe-OFET NVMs with a high-κ AlO x and ultra-thin P(VDF-TrFE) hybrid dielectric, to reduce the operating voltage and promote the data switching [112]. The device exhibited low voltage, fast operation, and satisfactory performance of low-power consumption due to the ultrathin ferroelectric and the high-quality 2D molecular crystals with excellent charge transport characteristics.…”

Section: Other Low-power Consumption Devicesmentioning

confidence: 99%

Low-power-consumption organic field-effect transistors

et al. 2020

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At present, the electrical performance of organic field-effect transistors (OFETs) has reached the level of commercial amorphous silicon. OFETs show considerable application potential in artificial intelligence, deep learning algorithms, and artificial skin sensors. The devices which can operate with high performance and low power consumption are needed for these applications. The recent energyrelated improvement to realize low-power consumption OFETs were reviewed, including minimizing operating voltage, reducing subthreshold swing, and decreasing contact resistance. In this review, we demonstrate breakthroughs in materials and methods to decrease power consumption, providing a promising avenue toward low-power consumption organic electronics. IntroductionFollowing the seminal paper from Tsumura, in which he demonstrated the first polythiophene-based field-effect transistor in 1986, organic field-effect transistors (OFETs) have received tremendous developments due to the intriguing properties of organic semiconductors, such as flexibility, stretchability, biocompatibility, solution processibility, and low cost [1][2][3][4]. To date, the field-effect mobility, which is the main character of an OFET device, has increased over 40 cm 2 V −1 s −1 . With the improvements in electric performance, the large-scale integration of OFETs have facilitated impressive application demonstrations, including organic light-emitting diode displays, radiofrequency identification tagging, and artificial skin [5][6][7][8][9][10][11][12]. To meet the future demand for product miniaturization and high properties, the number and density of transistors need to be increased, thus the heat energy caused by the power dissipation will lead to the degradation of organic materials and the life reduction of devices [13][14][15][16][17][18][19]. In addition, high power consumption limits the applications of most portable electronics which need an external battery [20][21][22][23]. All of these demands in applications require transistors to operate with extremely low-power consumption. However, power dissipation of most OFETs suffers from a high operating voltage typically a few tens of volts, which has a quadratic effect on dynamic power consumption [3,[24][25][26][27][28][29]. Furthermore, transistors sizes are also now approaching the point where quantum effects become appreciable, which can lead to an increased gate leakage current due to quantum tunneling and, in turn, an increased static power consumption.Achieving extremely energy-efficient OFETs is an essential prerequisite for commercial applications. After years of expansive development, significant advancements have been made in fabricating high quality dielectrics, thus reducing the operating voltage and leakage current. Furthermore, the subthreshold slope, which is negative correlation with switching efficiency, has witnessed a significant decrease driven by the process optimization and interface engineering [6,[30][31][32]. Additionally, the contact between semiconductors and electro...

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“…The thicknesses of the 1L and 2L films were ≈2.46 and 2.97 nm, respectively, which were in good agreement with the previously reported thickness. [24,50] The thickness difference between the 1L and 2L C 8 -BTBT films results from the variation in the molecular-substrate interaction for the 1L and 2L layers. [17] The 1L molecular-substrate interaction is stronger than the 2L molecular-substrate interaction, leading to the packing of 2L molecules being more upright than that of 1L molecules.…”

Section: Patterning 2d Organic Crystalline Semiconductors Via Thermalmentioning

confidence: 99%

Patterning 2D Organic Crystalline Semiconductors via Thermally Induced Self‐Assembly

Duan

Qian

Guo

et al. 2020

Adv Elect Materials

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Fabricating 2D organic crystalline semiconductors (2DOCSs) in a patterned structure is an essential prerequisite for application toward large‐scale and high‐throughput manufacturing integrated devices. However, the deposition of 2DOCS arrays with structural perfection and thickness control through suitable solution‐based techniques remains challenging. Here, a promising patterning technique is proposed for high‐quality 2DOCS arrays with centimeter‐scale size and tunable molecular layer number via thermally induced self‐assembly (TISA). The achieved 2DOCS arrays exhibit superior carrier mobility and reliable performance uniformity. Field‐effect transistors yield maximum and average carrier mobilities of 13.40 and 9.21 cm2 V−1 s−1, respectively. Furthermore, constructed vertical molecular heterostructure‐based planar diode arrays exhibit high electrical rectification (rectifying ratio of ≈104), gate tunability, and fast photoresponse speed. Therefore, the work paves the way toward rational design and construction of organic device arrays for high‐performance organic integrated circuits.

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pJ-Level Energy-Consuming, Low-Voltage Ferroelectric Organic Field-Effect Transistor Memories

Cited by 30 publications

References 45 publications

Semiconductor/dielectric interface in organic field-effect transistors: charge transport, interfacial effects, and perspectives with 2D molecular crystals

Semiconductor/dielectric interface in organic field-effect transistors: charge transport, interfacial effects, and perspectives with 2D molecular crystals

Low-power-consumption organic field-effect transistors

Patterning 2D Organic Crystalline Semiconductors via Thermally Induced Self‐Assembly

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