Pixels with add-on structures to enhance quantum efficiency in the near infrared

Bardonnet, Felix; Crocherie, Axel; Barlas, Marios; Abadie, Quentin; Jamin-Mornet, Clémence

doi:10.1117/12.2597142

Cited by 3 publications

(1 citation statement)

References 23 publications

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“…The incoming light is therefore diffracted by those structures, leading to an increase in the optical path inside the Si photodiode and therefore an increased absorption. While works like ours showed great gains in QE up to 200%, we also evidenced Modulation Transfer Function (MTF) degradations, caused by the added optical cross-talk [1]. The diffracted light is indeed crossing more easily through the Deep Trench Isolations (DTI) separating one pixel from another and is then absorbed in a neighboring pixel.…”

Section: Introductionmentioning

confidence: 68%

Modulation transfer function simulation methodology on CMOS image sensors using add-on structures for near infrared applications

Bardonnet¹,

Crocherie²,

Bénisty³

et al. 2023

Physics and Simulation of Optoelectronic Devices XXXI

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Silicon-based Complementary Metal Oxide Semiconductor (CMOS) image sensors are widely used for visible range detection systems. However, when it comes to near-infrared-range (NIR) applications like face recognition or Augmented/Virtual Reality (AR/VR), these sensors are much less efficient. This is due to the poor absorption of Silicon at such wavelengths. A well-known solution studied in-depth over the past few years to address this issue consists of etching diffractive structures into the Silicon. The incoming light is therefore diffracted inside the photodiode, increasing the optical path, and thus improving the Quantum Efficiency (QE) of the pixel. However, the Modulation Transfer Function (MTF) of the sensor is degraded in return on account of the increased light flux crossing from one pixel to the other, being eventually absorbed in the wrong pixel, an optical crosstalk that ends up degrading the MTF. Here, using Finite Difference Time Domain (FDTD) simulations of precisely the same Slanted Edge method as used in MTF characterization, we positively evaluate a new methodology to simulate the MTF of the sensor. We compared simulated results with characterization ones on actual pixels in several distinct configurations. We studied sensors’ MTF without any diffractive structures and others with various structures designed to influence the MTF more specifically in one direction (horizontal or vertical) at 940 nm. We demonstrated good agreements between simulations and characterizations, showing highly correlated tendencies across the whole studied set and giving us parameter predictive power on the MTF for future innovative pixel designs.

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Section: Introductionmentioning

confidence: 68%

Modulation transfer function simulation methodology on CMOS image sensors using add-on structures for near infrared applications

Bardonnet¹,

Crocherie²,

Bénisty³

et al. 2023

Physics and Simulation of Optoelectronic Devices XXXI

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Pixels and resonators with blazed Littrow structures: Passive and non-Hermitian approaches

Bardonnet,

Crocherie,

Besbes

et al. 2023

Applied Physics Letters

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The confinement of light by Littrow blazed grating structures is explored for targeted device operation principles. For passive devices, these grating structures are explored in one and two-dimensional versions to study resonant pixel with sizes of about ten grating periods (for 4.5 μm-side), which retain a CMOS compatible design. The resonances are found to substantially enhance the weak silicon absorption at 940 nm, a wavelength of interest for, e.g., distance ranging and face recognition, and to achieve a 7.5° angular tolerance. The addition of gain and loss in generic Littrow structures that display an original dispersion made of crossing manifold is next considered, with a view to the issue of broad-area laser modal control.

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Nano-diffractive elements in BSI pixel CMOS image sensors: optical design and process integration co-optimization with pixel scaling

Barlas¹,

Crocherie²,

Bardonnet³

et al. 2022

Integrated Optics: Devices, Materials, and Technologies XXVI

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Pixels with add-on structures to enhance quantum efficiency in the near infrared

Cited by 3 publications

References 23 publications

Modulation transfer function simulation methodology on CMOS image sensors using add-on structures for near infrared applications

Modulation transfer function simulation methodology on CMOS image sensors using add-on structures for near infrared applications

Pixels and resonators with blazed Littrow structures: Passive and non-Hermitian approaches

Nano-diffractive elements in BSI pixel CMOS image sensors: optical design and process integration co-optimization with pixel scaling

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