Defect engineering has been applied to prepare materials with modifiable dielectric properties. SrTiNb x O 3 (x = 0, 0.003, 0.006, 0.009, 0.012) ceramics were synthesized using the traditional solid-state reaction method and sintered in a reducing atmosphere. All samples show excellent dielectric properties with giant permittivity (> 3.5×10 4 ) and low dielectric loss (< 0.01). SrTiNb 0.003 O 3 ceramic exhibits a colossal permittivity of 4.6×10 4 and an ultralow dielectric loss of 0.005 (1 kHz, room temperature) as well as great temperature stability in the range of (−60)-160℃. The mechanism of the presented colossal permittivity (CP) properties is investigated by conducting X-ray photoelectron spectroscopy (XPS) and analyzing activation energies. The results indicate that the introduction of Nb 5+ and the reducing sintering atmosphere together generated the formation of Ti 3+ and O V . These defects further form Ti O Ti Ti V Ti defect dipoles, contributing to the coexisting giant permittivity and low dielectric loss in Nb-doped SrTiO 3 (STN) ceramics.