Pin point depth profiling for unit device or several nano‐devices

Surface & Interface Analysis

Kakuhara

et al. 2011

We focused on failure within fine copper patterning on a semiconductor chip. Three grades of samples were prepared; hard CMP treatment, soft CMP treatment and standard, and compared the differences by shave-off profiling. The shave-off profiles of CMP treatment revealed a saw-toothed structure, and the shave-off profile of a standard chip was revealed as a periodic triangular wave. The difference can be explained by the existence of residue on the CMP process.

Section: Introductionmentioning

confidence: 99%

Failure analysis of fine Cu patterning by shave‐off profiling

Nojima

Surface & Interface Analysis

Kakuhara

et al. 2011

Study on Sputtering Mechanism of Shave-off Profiling

e-J. Surf. Sci. Nanotechnol.

Nojima

Owari

2011

Self Cite

Shave-off profiling with nano-beam SIMS achieves the highly precise depth profiling with nanometer-scaled depth resolution by utilizing FIB micro-machining process to provide depth profile. This method is very unique depth profiling for acquiring a depth profile by shave-off scanning mode (A fast horizontal sweep of FIB is combined with the very slow vertical sweep). Shave-off profiling has its own features; absolute depth scale, pin point depth profiling and application for rough surface and/or hetero interface. However, the discussion of the sputtering mechanism in shave-off profiling is still insufficient because shave-off scanning mode has distinctive position of the primary ion beam against the sample. In this study, we discussed the difference of sputtering mechanism between shave-off scan and conventional raster scan from the view point of sputtered atom yields of experimental results and calculation results. In addition, the molecular dynamics (MD) simulation under shave-off condition is improved in order to visualize the sputtering mechanism of shave-off profiling. As a result, 'shave-off sputtered atom yield' is rather high compared to conventional sputtered atom yield according to distinctive sputtering mechanism of shave-off scanning mode.

Molecular Dynamics Simulations for Shave-Off Profiling

e-J. Surf. Sci. Nanotechnol.

Owari

2012

Self Cite

Shave-off profiling with nano-beam SIMS achieves the highly precise depth profiling with nanometer-scaled depth resolution by utilizing FIB micro-machining process to provide depth profile. This method has its own features: absolute depth scale, pin point depth profiling and application to rough surface and/or hetero interface. However, the discussion of the sputtering mechanism in shave-off profiling is still insufficient because shave-off scan mode has distinctive position of the primary ion beam against the sample. In this study, the sputtering yield and the mixing effects within the primary ion dose amount of up to 1.0×10 16 ions/cm 2 under shave-off condition were investigated using molecular dynamics simulations. These results were compared with those of under conventional raster scan mode. In addition, the ejected region of sputtered atoms was investigated. As a result, it was proved that shave-off scan mode has high sputtering yield and low mixing effects. Moreover, the relationship between the sputtering phenomenon and the atomic displacement under shave-off scan mode was demonstrated.